The Moscone Center
San Francisco, California, United States
2 - 7 February 2019
Conference 10919
Oxide-based Materials and Devices X
Sunday - Thursday 3 - 7 February 2019
Conference
Committee
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Conference Chairs
Program Committee
  • Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)
  • Philippe Bove, Nanovation (France)
  • Ekaterine Chikoidze, Univ. de Versailles Saint-Quentin-en Yvelines (France)
  • Jean-Jacques Delaunay, The Univ. of Tokyo (Japan)
  • Aleksandra B. Djurišic, The Univ. of Hong Kong (Hong Kong, China)
  • Michael D. Gerhold, U.S. Army Research Office (United States)
  • Michael A. Harper, CIV USN ONR GLOBAL (United States)
  • Adrián Hierro, Univ. Politécnica de Madrid (Spain)
  • Axel Hoffmann, Technische Univ. Berlin (Germany)
  • Na Lu, Purdue Univ. (United States)
  • Bianchi Méndez, Univ. Complutense de Madrid (Spain)

Program Committee continued...
  • Norbert H. Nickel, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany)
  • Tatsuo Okada, OPERA Ctr. for Organic Photonics and Electronics Research (Japan)
  • Ümit Özgür, Virginia Commonwealth Univ. (United States)
  • Seong-Ju Park, Gwangju Institute of Science and Technology (Korea, Republic of)
  • Manijeh Razeghi, Northwestern Univ. (United States)
  • Federico Rosei, Univ. du Québec (Canada)
  • Vinod Eric Sandana, Nanovation (France)
  • Michael L. Schuette, Air Force Research Lab. (United States)
  • Chris G. Van de Walle, Univ. of California, Santa Barbara (United States)
  • Bruno Viana, Ecole Nationale Supérieure de Chimie de Paris (France)
  • Markus R. Wagner, Technische Univ. Berlin (Germany)
  • Magnus Willander, Linköping Univ. (Sweden)
  • Hideki Yamamoto, NTT Basic Research Labs. (Japan)

Sunday 3 February Show All Abstracts
Welcome and Introduction
Sunday 3 February 2019
1:20 PM - 1:30 PM

David J. Rogers, Nanovation (France)
Session 1:
Keynote Session
Sunday 3 February 2019
1:30 PM - 2:15 PM
Session Chair:
David J. Rogers, Nanovation (France)
GA2O3: from material genesis to its application (Keynote Presentation)
Paper 10919-1
Author(s): Manijeh Razeghi, Northwestern Univ. (United States)
Show Abstract
Session 2:
Ultra Wide Bandgap Oxide Semiconductors: Density Functional Theory and Modelling
Sunday 3 February 2019
2:15 PM - 4:45 PM
Session Chairs:
Markus R. Wagner, Technische Univ. Berlin (Germany) ;
David C. Look, Wright State Univ. (United States)
Modeling of phase transitions in aluminum-gallium oxide alloys (Invited Paper)
Paper 10919-7
Author(s): Catalin S. Badescu, Air Force Research Lab. (United States)
Show Abstract
Theoretical spectroscopy on Ga2O3 polymorphs (Invited Paper)
Paper 10919-5
Author(s): Claudia Draxl, Humboldt-Univ. zu Berlin (Germany)
Show Abstract
Acceptor doping and self-trapped holes in Ga2O3 polymorphs (Invited Paper)
Paper 10919-6
Author(s): John L. Lyons, U.S. Naval Research Lab. (United States)
Show Abstract
Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in gallium oxide (Invited Paper)
Paper 10919-8
Author(s): Michael Lorke, Peter Deak, Quoc Duy Ho, Bálint Aradi, Thomas Frauenheim, Univ. Bremen (Germany)
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Elucidating electrically-active point defects and complexes in β-Ga2O3 through hybrid functional calculations (Invited Paper)
Paper 10919-9
Author(s): Joel B. Varley, Lawrence Livermore National Lab (United States)
Show Abstract
Session 3:
Deep Levels and Irradiation Induced Defects in Ga2O3
Sunday 3 February 2019
4:45 PM - 6:00 PM
Session Chairs:
Kelson Chabak, Air Force Research Lab. (United States) ;
David C. Look, Wright State Univ. (United States)
Anisotropy-induced issues in characterization of vacancy defects and compensation in Ga2O3 (Invited Paper)
Paper 10919-4
Author(s): Filip Tuomisto, Aalto University (Finland)
Show Abstract
Irradiation-induced deep level defects in β-Ga2O3 (Invited Paper)
Paper 10919-3
Author(s): Lasse Vines, Univ. I Oslo (Norway)
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Deep level defects and trapping effects in gallium oxide materials and transistors (Invited Paper)
Paper 10919-2
Author(s): Steven A. Ringel, Esmat Farzana, Joe F. McGlone, Christine Jackson, Hemant Jagannath Ghadi, Zhanbo Xia, Siddharth Rajan, Thomas Blue, The Ohio State Univ. (United States); Akhil Mauze, James S. Speck, Univ. of California, Santa Barbara (United States); Aaron Arehart, The Ohio State Univ. (United States)
Show Abstract
Monday 4 February Show All Abstracts
OPTO Plenary Session
Monday 4 February 2019
8:00 AM - 10:05 AM

8:00 am: Welcome and Opening Remarks
Connie J. Chang-Hasnain, Univ. of California, Berkeley (United States); Graham T. Reed, Optoelectronics Research Ctr. (United Kingdom)
Hyperscale data center applications of optoelectronics (Plenary Presentation)
Paper 10946-201
Author(s): Katharine Schmidtke, Facebook Inc. (United States)
Show Abstract
Two decades of progress for photonic crystals: from the realization of complete 3D crystals to the state of the art for society 5.0 (Plenary Presentation)
Paper 10927-202
Author(s): Susumu Noda, Kyoto Univ. Graduate School of Engineering (Japan)
Show Abstract
Deep-learning optics (Plenary Presentation)
Paper 10937-203
Author(s): Aydogan Ozcan, California NanoSystems Institute (United States), Univ. of California, Los Angeles (United States)
Show Abstract
Session 4:
Ultra Wide Bandgap Oxide Semiconductors: Progress in Thin Film Growth I
Monday 4 February 2019
10:30 AM - 12:35 PM
Session Chairs:
Philippe Bove, Nanovation (France) ;
Catherine Dubourdieu, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany)
Helicon-wave-excited-plasma sputtering epitaxy of (001) anatase or (100) rutile TiO2 films on a (0001) GaN template for optoelectronic applications (Invited Paper)
Paper 10919-10
Author(s): Shigefusa F. Chichibu, Tohoku Univ (Japan)
Show Abstract
Coherent gamma-Al2O3/Ga2O3 superlattices grown on MgAl2O4 (Invited Paper)
Paper 10919-11
Author(s): Takayoshi Oshima, Saga Univ. (Japan)
Show Abstract
Beta-Ga2O3: materials synthesis and device demonstration (Invited Paper)
Paper 10919-12
Author(s): Hongping Zhao, The Ohio State Univ. (United States)
Show Abstract
Atomic layer deposition of gallium oxide on silicon and sapphire (Invited Paper)
Paper 10919-13
Author(s): Catherine Dubourdieu, Helmholtz-Zentrum Berlin (Germany)
Show Abstract
Deposition and structure transformation of ultra-wide bandgap ZnGa2O4 materials (Invited Paper)
Paper 10919-14
Author(s): Dong-Sing Wuu, Shiau-Yuan Huang, Shuo-Huang Yuan, National Chung Hsing Univ. (Taiwan); Ray-Hua Horng, National Chiao Tung Univ. (Taiwan); Sin-Liang Ou, Da-Yeh Univ. (Taiwan); Bo-Wen Shiao, National Chung Hsing Univ. (Taiwan)
Show Abstract
Lunch Break 12:35 PM - 2:00 PM
Session 5:
Ultra Wide Bandgap Oxide Semiconductors: Progress in Thin Film Growth II
Monday 4 February 2019
2:00 PM - 3:35 PM
Session Chairs:
Catherine Dubourdieu, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany) ;
Philippe Bove, Nanovation (France)
Progress in the MBE growth of β-Ga2O3: doping and heterostructures (Invited Paper)
Paper 10919-15
Author(s): James S. Speck, Univ. of California, Santa Barbara (United States)
Show Abstract
Phonon-plasmon coupling in monoclinic symmetry Ga2O3 (Invited Paper)
Paper 10919-17
Author(s): Mathias Schubert, Univ. of Nebraska-Lincoln (United States), Linköping Univ. (Sweden), Leibniz Institute for Polymer Research (Germany); Alyssa Mock, Rafal Korlacki, Sean Knight, Univ. of Nebraska-Lincoln (United States); Vanya Darakchieva, Linköping Univ. (Sweden); B. Galazka, Guenther Wagner, Leibniz-Institut für Kristallzüchtung (Germany); Ken Goto, Novel Crystal Technology, Inc. (Japan); Hisashi Murakami, Yoshinao Kumagai, Tokyo Univ. of Agriculture and Technology (Japan); Masataka Higashiwaki, National Institute of Information and Communications Technology (Japan); James S. Speck, Univ. of California, Santa Barbara (United States)
Show Abstract
Phonons and thermal transport in Ga2O3 (Invited Paper)
Paper 10919-18
Author(s): Nadja Jankowski, Markus R. Wagner, TU Berlin (Germany)
Show Abstract
Ultra-high temperature annealing of β-Ga2O3 thin film
Paper 10919-23
Author(s): Che-Hao Liao, Kuang-Hui Li, Carlos Gerardo Torres-Castanedo, Guozheng Zhang, Xiaohang Li, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Show Abstract
Session 6:
Ultra Wide Bandgap Oxide Semiconductors: Progress in Thin Film Growth III
Monday 4 February 2019
4:00 PM - 5:35 PM
Session Chairs:
Markus R. Wagner, Technische Univ. Berlin (Germany) ;
David J. Rogers, Nanovation (France)
Exploration of orthorhombic (In,Ga)2O3 and (Al,Ga)2O3 by compositional screening (Invited Paper)
Paper 10919-19
Author(s): Holger von Wenckstern, Universität Leipzig (Germany)
Show Abstract
Metastable gallium oxide: growth and characteristics (Invited Paper)
Paper 10919-20
Author(s): Martin Eickhoff, Univ. Bremen (Germany)
Show Abstract
Growth mode and surface orientation in the homoepitaxial growth of β-Ga2O3: the influence of the miscut direction and faceting (Invited Paper)
Paper 10919-21
Author(s): Martin Albrecht, Leibniz-Institut für Kristallzüchtung (Germany)
Show Abstract
Tuning the phase (α, β, and ε) of gallium-oxide films grown by MOCVD
Paper 10919-24
Author(s): Haiding Sun, Kuang-Hui Li, King Abdullah Univ. of Science and Technology (Saudi Arabia); Serdal Okur, Gary Tompa, Structured Materials Industries, Inc. (United States); Xiaohang Li, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Show Abstract
Tuesday 5 February Show All Abstracts
Session 7:
Ultra Wide Bandgap Oxide Semiconductors: Doping and Band Structure
Tuesday 5 February 2019
8:00 AM - 10:35 AM
Session Chairs:
David J. Rogers, Nanovation (France) ;
Cuong Ton-That, Univ. of Technology, Sydney (Australia)
Using small low-temperature quantum effects to calculate 300-K mobility in complex degenerate semiconductors: Ga2O3 (Invited Paper)
Paper 10919-25
Author(s): David C. Look, Wright State Univ. (United States)
Show Abstract
Determination of band offsets of β-Ga2O3/FTO heterojunction (Invited Paper)
Paper 10919-27
Author(s): Carlos Gerardo Torres Castanedo, Kuang-Hui Li, Laurentiu Braic, Mohamed Nejib Hedhili, Haiding Sun, Xiaohang Li, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Show Abstract
Kinetics of charge carrier recombination in beta-Ga2O3 single crystals (Invited Paper)
Paper 10919-28
Author(s): Cuong Ton-That, Matthew Phillips, Univ of Technology Sydney (Australia)
Show Abstract
Processing and characterization of ion-implanted monoclinic gallium-oxide substrates (Invited Paper)
Paper 10919-29
Author(s): Marko J. Tadjer, Naval Research Lab (United States); Jiancheng Yang, University of Florida (United States); Jaime Freitas, Nadeemullah Mahadik, James Culbertson, Evan Glaser, Naval Research Lab (United States); Fan Ren, Stephen Pearton, University of Florida (United States); Akito Kuramata, Tamura Corp. and Novel Crystal Technology (Japan)
Show Abstract
Polarity behaviors of highly Ga-doped ZnO nanowires grown with the vapor-liquid-solid mode under different oxygen supply conditions (Invited Paper)
Paper 10919-73
Author(s): Yu-Feng Yao, Keng-Ping Chou, Huang-Hui Lin, Chi-Chung Chen, Yean-Woei Kiang, Chih-Chung Yang, National Taiwan Univ (Taiwan)
Show Abstract
Atomic structure and electronic properties of the β-Ga2O3(100) and In2O3(111) cleavage surface investigated by STM/STS
Paper 10919-30
Author(s): Celina Seraphin Schulze, Jonathan Hofmann, Robert Zielinski, Wjatscheslav Martyanov, Hendrik Janssen, Andrea Lenz, Martin Franz, Technische Univ. Berlin (Germany); Zbigniew Galazka, Leibniz-Institut für Kristallzüchtung (Germany); Holger Eisele, Technische Univ. Berlin (Germany)
Show Abstract
Hydrogen passivation of magnesium doped β-Ga2O3
Paper 10919-31
Author(s): Jacob Ritter, Jesse Huso, Peter T. Dickens, Washington State Univ. (United States); Joel B. Varley, Lawrence Livermore National Lab. (United States); Kelvin G. Lynn, Matthew D. McCluskey, Washington State Univ. (United States)
Show Abstract
Session 8:
Ultra Wide Bandgap Oxide Semiconductors: Applications
Tuesday 5 February 2019
11:00 AM - 2:30 PM
Session Chairs:
Vinod Eric Sandana, Nanovation (France) ;
Markus R. Wagner, Technische Univ. Berlin (Germany)
Progress on beta gallium oxide materials and transistor device scaling (Invited Paper)
Paper 10919-16
Author(s): Kelson Chabak, Andrew Green, Kevin Leedy, Antonio Crespo, Dennis Walker, Nolan Hendricks, Miles Lindquist, Neil Moser, Nicholas Miller, Adam Neal, Shin Mou, Gregg Jessen, Air Force Research Lab. (United States)
Show Abstract
Recent progress in vertical Ga2O3 transistors (Invited Paper)
Paper 10919-22
Author(s): Masataka Higashiwaki, Man Hoi Wong, Takafumi Kamimura, Yoshiaki Nakata, Chia-Hung Lin, National Institute of Information and Communications Technology (Japan); Ken Goto, Tokyo Univ. of Agriculture and Technology (Japan), Tamura Corp. (Japan); Akito Kuramata, Tamura Thermal Device Corp. (Japan); Shigenobu Yamakoshi, Tamura Corp. (Japan); Hisashi Murakami, Yoshinao Kumagai, Tokyo Univ. of Agriculture and Technology (Japan)
Show Abstract
Gallium-oxide trench-type devices (Invited Paper)
Paper 10919-33
Author(s): Kohei Sasaki, Novel Crystal Technology, Inc. (Japan); Shigenobu Yamakoshi, Novel Crystal Technology, Inc. (Japan), Tamura Corp. (Japan); Akito Kuramata, Novel Crystal Technology, Inc. (Japan)
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Defects analysis of ZnGa2O4 thin-film transistors and related properties study (Invited Paper)
Paper 10919-32
Author(s): Ray-Hua Horng, National Chiao Tung Univ (Taiwan)
Show Abstract
Cubic ZnMgO alloys for deep ultraviolet applications (Invited Paper)
Paper 10919-34
Author(s): Henryk Teisseyre, Institute of Physics PAS (Poland); Izabella Gorczyca, Institute of High Pressure Physics (Poland)
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DC and dynamic switching characteristics of field-plated vertical geometry β-Ga2O3 rectifiers (Invited Paper)
Paper 10919-35
Author(s): Jiancheng Yang, Fan Ren, Univ. of Florida (United States); Yen-Ting Chen, Yu-Ye Liao, National Chiao Tung Univ. (Taiwan); Chin-Wei Chang, Jenshan Lin, Univ. of Florida (United States); Marko Tadjer, U.S. Naval Research Lab. (United States); Stephen J. Pearton, Univ. of Florida (United States); Akito Kuramata, Tamura Thermal Device Corp. (Japan), Novel Crystal Technology, Inc. (Japan)
Show Abstract
Session 9:
2D Materials and Quantum Structures
Tuesday 5 February 2019
2:30 PM - 4:05 PM
Session Chairs:
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States) ;
Adrián Hierro, Univ. Politécnica de Madrid (Spain)
Electrical properties of BeMgZnO/ZnO heterostructures with high-density two-dimensional electron gas (Invited Paper)
Paper 10919-36
Author(s): Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç, Virginia Commonwealth Univ. (United States)
Show Abstract
Vertically coupling of ZnO nanorods on MoS2 flakes (Invited Paper)
Paper 10919-37
Author(s): Camilla Baratto, Istituto Nazionale di Ottica (Italy); Federica Rigoni, Lulea Univ. of Technology (Sweden); Maurizio Donarelli, Matteo Ferroni, Guido Faglia, Univ. degli Studi di Brescia (Italy)
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Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells (Invited Paper)
Paper 10919-38
Author(s): François H. Julien, Univ. Paris-Sud (France), Univ. Paris-Saclay (France); Arnaud Jollivet, Ctr. de Nanosciences et de Nanotechnologies (France); Borislav Hinkov, Technische Univ. Wien (Austria); Stefano Pirotta, Univ. Paris-Sud (France); Sophie Derelle, Julien Jaeck, ONERA (France); Maria Tchernycheva, Raffaele Colombelli, Adel Bousseksou, Ctr. de Nanosciences et de Nanotechnologies (France); Maxime Hugues, Nolwenn Le Biavan, Ctr. de recherche sur l'hétéroepitaxie et ses applications (France); Julen Tamayo-Arriola, Miguel Montes Bajo, Instituto de Sistemas Optoelectrónicos y Microtecnología, Univ. Politécnica de Madrid (Spain); Gottfried Strasser, Technische Univ. Wien (Austria); Jean-Michel Chauveau, Ctr. de recherche sur l'hétéroepitaxie et ses applications (France); Adrian Hierro, Instituto de Sistemas Optoelectrónicos y Microtecnología (Spain)
Show Abstract
Surface plasmon induced dramatic reflection reduction due to subwavelength coupling in indium-tin-oxide/lithium niobate
Paper 10919-39
Author(s): Jingwen Zhang, Chao Wang, Yingce Wang, Hua Zhao, Harbin Institute of Technology (China)
Show Abstract
Session 10:
Plasmonics
Tuesday 5 February 2019
4:30 PM - 6:20 PM
Session Chairs:
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States) ;
Adrián Hierro, Univ. Politécnica de Madrid (Spain)
ZnO plasmonic-waveguide nanolaser (Invited Paper)
Paper 10919-40
Author(s): Jean-Jacques Delaunay, Ya-Lun Ho, Kenji Clark, Syazwan Kamal, The Univ. of Tokyo (Japan)
Show Abstract
Shining light on oxide-based nanostructures: tunable plasmonics and spintronics (Invited Paper)
Paper 10919-41
Author(s): Rosalia Serna, Johann Toudert, Antonio Mariscal, Instituto de Optica "Daza de Valdés", Consejo Superior de Investigaciones Científicas (Spain)
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Interface phonon-polaritons as an all-optical technique to assess the Mg content in ZnO/MgZnO multiple quantum wells (Invited Paper)
Paper 10919-42
Author(s): Miguel Montes Bajo, Julen Tamayo-Arriola, José María Ulloa, Instituto de Sistemas Optoelectrónicos y Microtecnología, Univ. Politécnica de Madrid (Spain); Nolwenn Le Biavan, Maxime Hugues, Jean-Michel Chauveau, Ctr. de recherche sur l'hétéroepitaxie et ses applications, CNRS (France), Univ. Côte d'Azur (France); Adrian Hierro, Instituto de Sistemas Optoelectrónicos y Microtecnología, Univ. Politécnica de Madrid (Spain)
Show Abstract
Surface plasmon behaviors of highly-Ga doped ZnO
Paper 10919-43
Author(s): Charng-Gan Tu, Yu-Feng Yao, Wen-Yen Chang, Chi-Wu Liu, Wai Fong Tse, Yean-Woei Kiang, Chih-Chung Yang, National Taiwan Univ. (Taiwan)
Show Abstract
Plasmonic property of periodic silver nanoprism array applied on vanadium dioxide
Paper 10919-44
Author(s): YingChou Lu, Chun-Hway Hsueh, National Taiwan Univ. (Taiwan)
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Wednesday 6 February Show All Abstracts
Session 11:
Oxide-based Energy Harvesting and Solar I
Wednesday 6 February 2019
8:00 AM - 9:55 AM
Session Chairs:
Magnus Willander, Linköping Univ. (Sweden) ;
Federico Rosei, Institut National de la Recherche Scientifique (Canada)
Multifunctional materials for emerging technologies (Invited Paper)
Paper 10919-45
Author(s): Federico Rosei, Institut National de la Recherche Scientifique (Canada)
Show Abstract
On the role of different paramagnetic centers in transparent and conducting nickel oxide thin films (Invited Paper)
Paper 10919-46
Author(s): Giovanni Fanchini, Angela Ebere Ezugwu, Victor Wong, Paul Bazylewski, Western Univ. (Canada)
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Strategies for high-performance perovskite solar cells (Invited Paper)
Paper 10919-47
Author(s): Annie Ng, Nazarbayev Univ. (Kazakhstan); Zhiwei Ren, The Hong Kong Polytechnic Univ. (China); Jin-Wook Lee, Univ. of California, Los Angeles (United States); Gang Li, The Hong Kong Polytechnic Univ. (China); Aleksandra Djurisic, The Univ. of Hong Kong (China); Yang Yang, Univ. of California, Los Angeles (United States); Charles Surya, Nazarbayev Univ. (Kazakhstan)
Show Abstract
Temperature-dependent optical and electrical properties of ZnO thin films for energy applications (Invited Paper)
Paper 10919-48
Author(s): Na (Luna) Lu, Yang Wang , Purdue Univ (United States); Ian Ferguson, Missouri University of Science and Technology (United States)
Show Abstract
Synthesis and characterization of SnO2/graphene transparent conducting films
Paper 10919-49
Author(s): Kevin Esparza, Virginia Marañón, Corinna Enríquez, Héctor Pérez Ladrón de Guevara, Jesús Castañeda, Ruben Rodríguez, Rita Patakfalvi, Roger Chiu, Univ. de Guadalajara (Mexico)
Show Abstract
Session 12:
Oxide-based Energy Harvesting and Solar II
Wednesday 6 February 2019
10:20 AM - 12:00 PM
Session Chairs:
Magnus Willander, Linköping Univ. (Sweden) ;
Federico Rosei, Institut National de la Recherche Scientifique (Canada)
Environmentally friendly approach via solvent-free processed perovskite solar cells (Invited Paper)
Paper 10919-50
Author(s): Ho Won Tam, Fangzhou Liu, Aleksandra B. Djurišic, The Univ. of Hong Kong (Hong Kong, China); Alan Man Ching Ng, Southern Univ. of Science and Technology of China (China); Wai Kin Chan, The Univ. of Hong Kong (Hong Kong, China)
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Two-dimensional organic-inorganic hybrid perovskites (Invited Paper)
Paper 10919-51
Author(s): Letian Dou, Purdue University (United States)
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MgZnO high-voltage thin-film transistor for PV system on glass (Invited Paper)
Paper 10919-52
Author(s): Yicheng Lu, Rutgers, The State University of New Jersey (United States)
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Ferroelectric bulk photovoltaic effect at the nanoscale (Invited Paper)
Paper 10919-53
Author(s): Jonathan Spanier, Drexel Univ. (United States)
Show Abstract
Lunch/Exhibition Break 12:00 PM - 1:15 PM
Session 13:
Photon-induced Phenomena in Oxides
Wednesday 6 February 2019
1:15 PM - 2:45 PM
Session Chairs:
Martin Eickhoff, Univ. Bremen (Germany) ;
Philippe Bove, Nanovation (France)
Ultrafast time-resolved spectroscopy in hetero-epitaxial BTO-BFO films and nano-rods (Invited Paper)
Paper 10919-54
Author(s): Giti A. Khodaparast, Virginia Polytechnic Institute and State Univ. (United States)
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Artificially-engineered Voigt exceptional points in a ZnO optical microcavity: from square-root topology to linear-polarization vortices (Invited Paper)
Paper 10919-55
Author(s): Jesús Zúñiga-Pérez, CNRS (France); Steffen Richter, Heinrich-Gregor Zirnstein, Univ. Leipzig (Germany); Christiane Deparis, CNRS (France); Lukas Trefflich, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund, Univ. Leipzig (Germany)
Show Abstract
Excitation of epsilon-near-zero resonance in aluminum-doped zinc oxide nano-coated D-shaped optical fiber
Paper 10919-56
Author(s): Jingyi Yang, Aleksei Anopchenko, Sudip Gurung, Khant Minn, Subhajit Bej, Baylor Univ. (United States); Howard Lee, Baylor Univ. (United States), Texas A&M Univ. (United States)
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Enhancement in optical properties of ZnO nanorods by UV ozone treatment
Paper 10919-57
Author(s): Md Jawaid Alam, Punam Murkute, Sushama Sushama, Hemant Ghadi, Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
Show Abstract
Session 14:
Tuning Transmittance and Reflectance from UV to IR
Wednesday 6 February 2019
2:45 PM - 5:00 PM
Session Chairs:
Aleksandra B. Djurišic, The Univ. of Hong Kong (Hong Kong, China) ;
Vinod Eric Sandana, Nanovation (France)
Exciting and confining light in nanostructured Cr doped gallium oxide (Invited Paper)
Paper 10919-26
Author(s): Manuel Alonso-Orts, Emilio Nogales, Univ. Complutense de Madrid (Spain); Jose M. San Juan, Maria Luisa Nó, Univ. del País Vasco (Spain); Bianchi Méndez, Univ. Complutense de Madrid (Spain)
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Through the (conducting) looking-glass: transparent conducting oxides for nanophotonic applications (Invited Paper)
Paper 10919-58
Author(s): Alexandra Boltasseva, Clayton DeVault, Purdue Univ. (United States); Vincenzo Bruno, Univ. of Glasgow (United Kingdom), Heriot-Watt Univ. (United Kingdom); Soham Saha, Zhaxylyk Kudyshev, Aveek Dutta, Purdue Univ. (United States); Stefano Vezzoli, Marcello Ferrera, Heriot-Watt Univ. (United Kingdom); Daniele Faccio, Univ. of Glasgow (United Kingdom), Heriot-Watt Univ. (United Kingdom); Vladimir M. Shalaev, Purdue Univ. (United States)
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Intersubband transitions in wide band gap semiconductor oxides: a tool to tune the hyperbolic response in metamaterials (Invited Paper)
Paper 10919-59
Author(s): Jean-Michel Chauveau, Mario Ferraro, Ctr. de recherche sur l'hétéroepitaxie et ses applications, CNRS (France); Miguel Montes Bajo, Julen Tamayo-Arriola, Instituto de Sistemas Optoelectrónicos y Microtecnología, Univ. Politécnica de Madrid (Spain); Nolwenn Le Biavan, Maxime Hugues, Ctr. de recherche sur l'hétéroepitaxie et ses applications, CNRS (France); Massimo Giudici, Institut de Physique de Nice (France); Angela Vasanelli, Lab. Matériaux et Phénomènes Quantiques, Univ. Paris Diderot (France); Patrice Genevet, Ctr. de recherche sur l'hétéroepitaxie et ses applications, CNRS (France); Adrian Hierro, Instituto de Sistemas Optoelectrónicos y Microtecnología, Univ. Politécnica de Madrid (Spain)
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Mid-infrared optical waveguide using ferroelectric oxides
Paper 10919-60
Author(s): Pao T. Lin, Tiening Jin, Junchao Zhou, Texas A&M Univ. (United States)
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Transparent and ultra-flexible PEDOT:PSS/ITO/Ag/ITO on parylene thin films with tunable properties
Paper 10919-61
Author(s): Weiyang Yang, Jiajia Wu, Qihua Fan, Wen Li, Michigan State Univ. (United States)
Show Abstract
Session 15:
Oxide-based Gas Sensors
Wednesday 6 February 2019
5:00 PM - 6:20 PM
Session Chairs:
David J. Rogers, Nanovation (France) ;
Aleksandra B. Djurišic, The Univ. of Hong Kong (Hong Kong, China)
Optical gas sensing properties of gold-nanoparticle incorporated LSTO films at high temperature (Invited Paper)
Paper 10919-62
Author(s): Jeffrey K. Wuenschell, Youngseok Jee, National Energy Technology Lab. (United States), AECOM (United States); Paul R. Ohodnicki, National Energy Technology Lab. (United States)
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High sensing properties of tin-oxide structures (SnO, Sn3O4, and SnO2)
Paper 10919-63
Author(s): Marcelo Orlandi, Univ. Estadual Paulista "Julio de Mesquita Filho" (Brazil); Pedro H. Suman, Martin S. Barbosa, Mateus G. Masteghin, Anderson A. Felix, Univ. Estadual Paulista "Júlio de Mesquita Filho" (Brazil)
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Degenerately doped zinc-oxide nanocrystals as plasmonic and chemoresistive gas sensors
Paper 10919-64
Author(s): Marco Sturaro, Univ. degli Studi di Padova (Italy); Enrico Della Gaspera, RMIT Univ. (Australia); Carlo Cantalini, Univ. degli Studi dell'Aquila (Italy); Massimo Guglielmi, Alessandro Martucci, Univ. degli Studi di Padova (Italy)
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Annealing effect for NOx gas sensor based on ZnGa2O4 epi-layer grown by MOCVD
Paper 10919-65
Author(s): Min-Ru Wu, Li-Chung Cheng, Chiung-Yi Huang, Ray-Hua Horng, National Chiao Tung Univ. (Taiwan)
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Session PWed:
Posters-Wednesday
Wednesday 6 February 2019
6:00 PM - 8:00 PM

Conference attendees are invited to attend the OPTO poster session on Wednesday evening. Come view the posters, enjoy light refreshments, ask questions, and network with colleagues in your field. Authors of poster papers will be present to answer questions concerning their papers. Attendees are required to wear their conference registration badges to the poster sessions. Poster authors, view poster presentation guidelines and set-up instructions at http://spie.org/PWPosterGuidelines.
Investigating time-varying phosphorous doping effect on the structural and optical properties of ZnO thin films
Paper 10919-83
Author(s): Sushama Sushama, Punam Murkute, Hemant Ghadi, Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
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High-temperature oxygen sensing behavior of perovskite films on the optical fiber platform
Paper 10919-84
Author(s): Youngseok Jee, Jeffrey K. Wuenschell, Yu Yang, National Energy Technology Lab. (United States), AECOM (United States); Paul R. Ohodnicki, National Energy Technology Lab. (United States)
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Enhanced optical properties with the assimilation of boron and phosphorus dopant in co-doped ZnO thin film
Paper 10919-85
Author(s): Sushama Sushama, Punam Murkute, Hemant Ghadi, Vinayak Chavan, Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
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Augmenting optical and structural properties in Zn0.85Mg0.15O thin film with P-B co-doping
Paper 10919-86
Author(s): Sushama Sushama, Punam Murkute, Hemant Ghadi, Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
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Interdependence of Ar and O2 partial pressure on the properties of RF sputtered Zn0.85Mg0.15O thin film
Paper 10919-87
Author(s): Punam Murkute, Hemant Ghadi, Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
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Doped SnO2 nanoparticles for solar-cell application
Paper 10919-88
Author(s): Tik Lun Leung, Fangzhou Liu, Ho Won Tam, Wei Chen, The Univ. of Hong Kong (Hong Kong, China); Alan Man Ching Ng, Southern Univ. of Science and Technology of China (China); Aleksandra B. Djurišic, Wai-Kin Chan, The Univ. of Hong Kong (Hong Kong, China)
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Enhancement of photocurrent and responsivity of Zn1-xMgxO (x=15%) -based ultraviolet detector by UV-ozone treatment
Paper 10919-89
Author(s): Md Jawaid Alam, Punam Murkute, Hemant Ghadi, Sushama Sushama, Indian Institute of Technology Bombay (India); Shyam Murli Manohar Dhar Dwivedi, Anupam Ghosh, Chiranjib Ghosh, Aniruddha Mondal, National Institute of Technology, Durgapur (India); Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
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Enhancement in optical properties with suppression of defect states by UV-ozone processing in RF sputtered Zn1-xMgxO (x=15%) thin film
Paper 10919-90
Author(s): Md Jawaid Alam, Punam Murkute, Sushama Sushama, Hemant Ghadi, Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
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Improvement in performance characteristics of Zn(1-x)MgxO (x=15%)thin film transistor (TFT) with UV-ozone treatment
Paper 10919-91
Author(s): Md Jawaid Alam, Sushama Sushama, Hemant Ghadi, Punam Murkute, Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
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Design, fabrication, and characterization of a disordered one-dimensional photonic bandgap structure
Paper 10919-92
Author(s): Gavin La Rue, Ehsan Ordouie, Hossein Alisafaee, Azad Siahmakoun, Rose-Hulman Institute of Technology (United States)
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Characterization of ZnO and Fe doped ZnO nanoparticles using fluorescence spectroscopy
Paper 10919-93
Author(s): Mihiri Fernando, Cheshire High School (United States); Rahul Singhal, Central Connecticut State Univ. (United States); Binlin Wu, Southern Connecticut State Univ. (United States)
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Thursday 7 February Show All Abstracts
Session 16:
Specialized Characterization
Thursday 7 February 2019
8:20 AM - 10:20 AM
Session Chairs:
Philippe Bove, Nanovation (France) ;
Matthew Putman, Nanotronics Imaging, Inc. (United States)
Inspection and functionality convergence (Invited Paper)
Paper 10919-66
Author(s): Matthew Putman, Vadim Pinskiy, Denis Sharoukhov, Nanotronics (United States)
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Non-contact temperature mapping in alpha-alumina using surface Raman scattering method (Invited Paper)
Paper 10919-67
Author(s): Juddha Thapa, National Energy Technology Lab. (United States), AECOM (United States); Steven D. Woodruff, Michael P. Buric, Benjamin T. Chorpening, National Energy Technology Lab. (United States)
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Zinc-oxide nanowires characterization using optical reflectance
Paper 10919-68
Author(s): Mazen Erfan, l'École Supérieure d'Ingénieurs en Électrotechnique et Électronique (France), Univ. Paris-Est Marne-la-Vallée (France); Martine Gnambodoe-Capochichi, Marie Le Pivert, Univ. Paris-Est Marne-la-Vallée (France); Frédéric Marty, Univ. Paris-Est (France), l'École Supérieure d'Ingénieurs en Électrotechnique et Électronique (France); Yasser M. Sabry, Ain Shams Univ. (Egypt); Yamin Leprince-Wang, Univ. Paris-Est Marne-la-Vallée (France); Tarik Bourouina, Univ. Paris-Est (France), l'École Supérieure d'Ingénieurs en Électrotechnique et Électronique (France)
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Role of microstructure and stress evolution on elastic constants of multiferroic oxide-based thin films (Invited Paper)
Paper 10919-69
Author(s): Daniel Wamwangi, University of the Witwatersrand (South Africa)
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Electron beam induced modifications in third harmonic process of spray coated Mn: ZnO nanostructures (Invited Paper)
Paper 10919-70
Author(s): Albin Antony, MANIPAL INSTITUTE OF TECHNOLOGY (India)
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Session 17:
Oxide Nanostructures and Applications
Thursday 7 February 2019
10:50 AM - 12:00 PM
Session Chairs:
Vincent Sallet, Univ. de Versailles Saint-Quentin-en Yvelines (France) ;
Magnus Willander, Linköping Univ. (Sweden)
Photocatalytic properties for different metal-oxide nanomaterials (Invited Paper)
Paper 10919-71
Author(s): Magnus Willander, Linköping Univ (Sweden)
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Crystal facet engineering in Ga-doped ZnO nanowires for mid-IR plasmonics (Invited Paper)
Paper 10919-72
Author(s): Vincent Sallet, GEMAC, CNRS-UVSQ (France)
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Surface engineering using compounds of titanium nanocoatings for silicon-based optical devices
Paper 10919-74
Author(s): Ankitha E. Bangera, Kumar Appaiah, Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
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Lunch/Exhibition Break 12:00 PM - 1:30 PM
Session 18:
Tuning Electrical Properties
Thursday 7 February 2019
1:30 PM - 3:20 PM
Session Chairs:
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States) ;
Manijeh Razeghi, Northwestern Univ. (United States)
Tunable conducting oxide epsilon-near-zero meta-devices (Invited Paper)
Paper 10919-75
Author(s): Aleksei Anopchenko, Subhajit Bej, Sudip Gurung, Jingyi Yang, Long Tao, Catherine Arndt, Baylor Univ. (United States); Howard Lee, Baylor Univ. (United States), Texas A&M Univ. (United States)
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Development of electron-selective SiO2/TiO2 stack layers with superior surface passivation capacity for n-type silicon substrates (Invited Paper)
Paper 10919-76
Author(s): Hisham Nasser, Doguscan Ahiboz, Ezgi Aygun, Mona Zolfaghari Borra, Ozan Akdemir, Alpan Bek, Rasit Turan, Middle East Technical Univ. (Turkey)
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Tuning the epsilon-near-zero region of ultra-thin Al-doped ZnO through atomic layer deposition
Paper 10919-77
Author(s): Garand T. Tyson, Sudip Gurung, Subhajit Bej, Aleksei Anopchenko, Baylor Univ. (United States); Howard Lee, Baylor Univ. (United States), Texas A&M Univ. (United States)
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Metal-insulator transition-induced adaptive multispectral infrared camouflage
Paper 10919-78
Author(s): Sayan Chandra, Daniel Franklin, Jared Cozart, Alireza Safaei, Debashis Chanda, Univ. of Central Florida (United States)
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Oscillation electron model of mixed copper-lanthanum oxide crystals
Paper 10919-79
Author(s): Nadezhda P. Netesova, M.V. Lomonosov Moscow State Univ. (Russian Federation)
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Session 19:
Emitters and Detectors
Thursday 7 February 2019
3:50 PM - 5:05 PM
Session Chairs:
Philippe Bove, Nanovation (France) ;
Adrián Hierro, Univ. Politécnica de Madrid (Spain)
Using ZnO multiple quantum well metastructures for IR light polarization sensitive photodetection under normal incidence (Invited Paper)
Paper 10919-80
Author(s): Adrian Hierro, Miguel Montes Bajo, Julen Tamayo-Arriola, José María Ulloa, Univ. Politécnica de Madrid (Spain); Nolwenn Le Biavan, Denis Lefebvre, Maxime Hugues, Jean-Michel Chauveau, Ctr. de recherche sur l'hétéroepitaxie et ses applications, CNRS (France), Univ. Côte d'Azur (France)
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Efficient white-light emission from Zn2GeO4 nanomaterials (Invited Paper)
Paper 10919-81
Author(s): Pedro Hidalgo Alcalde, Jaime José Dolado Fernández, Alexandra García Crespo, Julio Ramírez Castellanos, Bianchi Méndez, Univ. Complutense de Madrid (Spain)
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ZnO thin films for solar cell and lighting applications (Invited Paper)
Paper 10919-82
Author(s): Hendrik Swart, University of the Free State (South Africa)
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