18 - 22 August 2024
San Diego, California, US
Conference 13111 > Paper 13111-73
Paper 13111-73

Polarized Light-Sensitive, Monolayer MoS2 Plasmonic Phototransistors

19 August 2024 • 5:30 PM - 7:00 PM PDT | Conv. Ctr. Exhibit Hall A

Abstract

The text highlights the significance of polarized light detection in quantum communication. It introduces polarization-sensitive phototransistors made from MoS2 and Au nanorod arrays, optimized through FDTD calculations. These devices exhibit strong linear polarization selectivity at 660 nm, with a 90.5% polarization ratio. The study suggests exploring efficient polarized-light phototransistors using the proposed nanostructure and discusses potential applications of ultrathin phototransistors with high polarization sensitivity.

Presenter

Wang ChenYu
Research Ctr. for Applied Sciences - Academia Sinica (Taiwan), National Taiwan Univ. (Taiwan)
Presenter/Author
Wang ChenYu
Research Ctr. for Applied Sciences - Academia Sinica (Taiwan), National Taiwan Univ. (Taiwan)
Author
Research Ctr. for Applied Sciences - Academia Sinica (Taiwan), National Taiwan Univ. (Taiwan)
Author
The Univ. of Tokyo (Japan)
Author
Research Ctr. for Applied Sciences - Academia Sinica (Taiwan), National Taiwan Univ. (Taiwan)
Author
Tzu-Yu Peng
Research Ctr. for Applied Sciences - Academia Sinica (Taiwan), National Taiwan Univ. (Taiwan)
Author
Jia-Wern Chen
Research Ctr. for Applied Sciences - Academia Sinica (Taiwan)
Author
Research Ctr. for Applied Sciences - Academia Sinica (Taiwan), National Taiwan Univ. (Taiwan)
Author
Vincent Tung
The Univ. of Tokyo (Japan)
Author
Research Ctr. for Applied Sciences - Academia Sinica (Taiwan), National Taiwan Univ. (Taiwan)