Paper 13111-24
Paper 13111-24
Detecting surface plasmon using a AlGaN/GaN high electron mobility transistor (Invited Paper)
19 August 2024 • 11:20 AM - 11:45 AM PDT | Conv. Ctr. Room 4
Abstract
The surface of a gateless AlGaN/GaN high-electron-mobility transistor (HEMT) is very sensitive to the attachment of electric charges which can greatly affect its channel conductance. For near two decades, HEMT has been researched as a possible sensor for chemical and bio-spices. In this study, we demonstrate the ability of an AlGaN/GaN HEMT to detect surface plasmon via the plasmonic generated hot-carrier injection. A theoretical model explaining the detecting mechanism will be introduced and verified by several experimental results. We will also discuss several possible applications of HEMT devices in the field of Plasmonics.
Presenter
Research Ctr. for Applied Sciences - Academia Sinica (Taiwan)
Dr. Chang obtained his Bachelor degree in Physics from National Taiwan University in 1996 and Ph.D. degree in electrical engineering from North Carolina State University in 2001. Between 2003 and 2014, he was a faculty member in Department of Photonics, National Cheng Kung University in Tainan. In 2014, he moved to his current position as an associate research fellow in Research Center for Applied Sciences, Academia Sinica in Taipei. Dr. Chang has published about 43 SCI journal papers and delivered 30 oral presentations at international conferences, including 11 invited talks. His research areas include Nanophotonics, Plasmonics, and Nanofabrication. Dr. Chang is also a senior member of SPIE and IEEE.