Paper 13427-22
Development status of nanoimprint templates for advanced semiconductor devices (Invited Paper)
25 February 2025 • 4:30 PM - 5:00 PM PST
Abstract
Nanoimprint lithography, NIL, is attracting attention again as the next generation lithography. Its advantages of higher resolution to ArF-i lithography and lower cost-of-ownership and power consumption to EUVL are still sought for the development of sustainable semiconductor manufacturing technology. For years, we have developed E-beam written template and its replication technology by NIL simultaneously. In this presentation, we will report on our newly developed works that bring our template performance to the requirements of advanced device manufacturing from the aspects of resolution and defectivity.
Presenter
Dai Nippon Printing Co., Ltd. (Japan)
Takaharu Nagai joined Dai Nippon Printing in 2006, after receiving a master's degree in mechano-informatics from University of Tokyo. For the first 3 years, he worked for ArF mask and lithographic technology development. Since the beginning of NIL project in 2009, he has been engaged in the development of template replication technology and, more recently, EB writing pattern generation by using MBMW.