Ultrafast electric Mott transition in GaTa4Se8 following THz photoexcitation
Quasi-dc electric fields of several hundred kV/cm can currently be generated with ultrashort pulses in the low frequency or THz range, enabling the investigation of the sub-picosecond dynamics of the electric field driven Mott transition. THz pulses can also be used to track the Drude conductivity response of the material directly, without the need to deposit any electrical contacts on the sample. We will present our results on THz driven dynamics in GaTa4Se8, a Mott insulator which exhibits clear electrical Mott transitions.
ETH Zurich (Switzerland)
Elsa Abreu has been a Senior Research Assistant at the Institute for Quantum Electronics in the Physics Department since 2019. In 2018 she was awarded an Ambizione Grant from the Swiss National Science Foundation and has since then been leading a team as a part of Prof. Steven Johnson's Ultrafast Dynamics Group. She obtained her BSc in Physics from the Instituto Superior Técnico in Lisbon, Portugal, in 2005, and her MSc at Instituto Superior Técnico and Uppsala University, Sweden, in 2007. In 2014 she graduated with her PhD in Physics from Boston University, MA, USA. Between 2015 and 2018 Elsa Abreu worked as a postdoctoral fellow in Prof. Steven Johnson's group at the Institute for Quantum Electronics.