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Proceedings Paper

Optical and material characteristics of InAs/GaAs quantum dots
Author(s): Sa Huang; Pin-Fang Huang; Zhe Chuan Feng; April Brown; Weijie Lu
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Paper Abstract

A series of self-organized InAs/GaAs quantum dots with spacer layer under different thermal-treat (annealing) temperature and environments were prepared by molecular beam epitaxy. They were investigated by atomic force microscope and temperature-dependent photoluminescence (PL). Results showed that the sample annealed at lower temperature has lager size quantum dots and smaller density of quantum dots. The size of quantum dots is getting smaller and the density of quantum dots is getting larger as the annealing temperature increase. Two broad PL peaks are attributed to the combined size distribution of the bimodal quantum dots.

Paper Details

Date Published: 9 September 2008
PDF: 10 pages
Proc. SPIE 7039, Nanoengineering: Fabrication, Properties, Optics, and Devices V, 70391I (9 September 2008); doi: 10.1117/12.795580
Show Author Affiliations
Sa Huang, Georgia Institute of Technology (United States)
Pin-Fang Huang, National Taiwan Univ. (Taiwan)
Zhe Chuan Feng, National Taiwan Univ. (Taiwan)
April Brown, Duke Univ. (United States)
Weijie Lu, Fisk Univ. (United States)

Published in SPIE Proceedings Vol. 7039:
Nanoengineering: Fabrication, Properties, Optics, and Devices V
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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