Paper 13046-52
Paper 13046-52
Low-noise high-sensitivity digital readout integrated circuit for SWIR imaging
25 April 2024 • 9:10 AM - 9:30 AM EDT | National Harbor 5
Abstract
Indium gallium arsenide and colloidal quantum dot SWIR sensors can produce stronger contrast imagery than their visible counterparts due to the reduced scattering in the SWIR band. A 640 x 512 format, 10 μm pixel pitch low-noise highsensitivity DROIC, with a capacitive transimpedance amplifier pixel front end, for SWIR imaging is presented. This DROIC has variable gain pixels with well capacities of approximately 22 ke- in high gain, 160 ke- in mid gain and 1.1 Me- in low gain. The readout boasts a low read noise of only 15 e- rms at room temperature in high gain with correlated double sampling. This DROIC can run at 700 fps full frame and 8.9 kfps for 32 x 32 window.
Presenter
Senseeker Engineering Inc. (United States)
An experienced Electrical Engineer with extensive education. Two decades of progressive experience in integrated circuit (IC) design, with expertise in digital image sensor design (ultraviolet / visible / infrared). Technical lead for several CMOS image sensor (CIS) and readout integrated circuit (ROIC) products from conception to productization. Principal Investigator / Key Person on multiple research grants (DoD, NASA). Doctor of Philosophy (Ph.D.) degree in Electrical Engineering, Master of Science (M.S.) degree in Electrical Engineering, and Bachelor of Technology (B.Tech.) degree in Electrical and Electronics Engineering. Several patents and technical publications. Senior Member of the IEEE, and Member of the SPIE, the ASME and the PMI.
Presently, Director of Engineering at Senseeker that specializes in the design of state-of-the-art digital ROICs for advanced infrared imaging applications.