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Proceedings of SPIE Volume 4345

Advances in Resist Technology and Processing XVIII
Editor(s): Francis M. Houlihan
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Volume Details

Volume Number: 4345
Date Published: 24 August 2001
Softcover: 112 papers (1134) pages
ISBN: 9780819440310

Table of Contents
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Experimental approaches for assessing interfacial behavior of polymer films during dissolution in aqueous base
Author(s): William D. Hinsberg; Seok-Won Lee; Hiroshi Ito; Donald E. Horne; Kay K. Kanazawa
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Mechanistic understanding of line-end shortening
Author(s): Michael D. Stewart; Gerard M. Schmid; Sergei V. Postnikov; C. Grant Willson
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Image collapse issues in photoresist
Author(s): John P. Simons; Dario L. Goldfarb; Marie Angelopoulos; Scott Messick; Wayne M. Moreau; Chris Robinson; Juan J. de Pablo; Paul F. Nealey
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Optimum tone for various feature types: positive versus negative
Author(s): Timothy A. Brunner; Carlos A. Fonseca
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Understanding nonlinear dissolution rates in photoresists
Author(s): Sean D. Burns; Allen B. Gardiner; Val J. Krukonis; Paula M. Wetmore; Jodie Lutkenhaus; Gerard M. Schmid; Lewis W. Flanagin; C. Grant Willson
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IBM 193-nm bilayer resist: materials, lithographic performance, and optimization
Author(s): Ranee W. Kwong; Pushkara Rao Varanasi; Margaret C. Lawson; Timothy Hughes; George M. Jordhamo; Mahmoud Khojasteh; Arpan P. Mahorowala; Ratnam Sooriyakumaran; Phillip J. Brock; Carl E. Larson; Debra Fenzel-Alexander; Hoa D. Truong; Robert D. Allen
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ArF negative resist system using androsterone structure with delta-hydroxy acid for 100-nm phase shifting lithography
Author(s): Yoshiyuki Yokoyama; Takashi Hattori; Kaori Kimura; Toshihiko P. Tanaka; Hiroshi Shiraishi
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Base additives for use in a single layer 193-nm resist based upon poly(norbornene/maleic anhydride/acrylic acid/tert-butyl acrylate)
Author(s): Francis M. Houlihan; Donna Person; Omkaram Nalamasu; Ilya Rushkin; Ognian N. Dimov; Elsa Reichmanis
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193-nm single-layer resists based on advanced materials
Author(s): Naomi Shida; Tohru Ushirogouchi; Koji Asakawa; Yoshinori Funaki; Akira Takaragi; Kiyoharu Tsutsumi; Keizo Inoue; Tatsuya Nakano
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Improved lithographic performance of 193-nm photoresists based on cycloolefin/maleic anhydride copolymer by employing mixed PAGs
Author(s): Se-Jin Choi; Yong-Jun Choi; Yang-Sook Kim; Sang-Don Kim; Deog-Bae Kim; Jae-Hyun Kim; Cha-Won Koh; Geunsu Lee; Jae Chang Jung; Ki-Ho Baik
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Comparison of acid-generating efficiencies in 248 and 193-nm photoresists
Author(s): James F. Cameron; Nicholas Chan; Kathryn Moore; Gerd Pohlers
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193 SLR system based on COMA/acryl hybrid system
Author(s): Masafumi Yamamoto; Kiyoshi Murata; Hiroyuki Ishii; Satoshi Ebata; Toru Kajita; Tsutomu Shimokawa
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Improved lithographic performance for resists based on polymers having a vinyl ether-maleic anhydride (VEMA) backbone
Author(s): Hyun-Woo Kim; Sang-Jun Choi; Dong-Won Jung; Sook Lee; Sung-Ho Lee; Yool Kang; Sang-Gyun Woo; Joo-Tae Moon; Robert J. Kavanagh; George G. Barclay; George W. Orsula; Joe Mattia; Stefan Caporale; Timothy G. Adams; Tsutomu Tanaka; Doris Kang
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Thermal properties of COMA materials
Author(s): Ilya L. Rushkin; Bernard T. Beauchemin; Ognian N. Dimov; Thomas Kocab; Arturo N. Medina; Thomas R. Sarubbi; Murrae J. Bowden
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Modification of 193-nm (ArF) photoresists by electron beam stabilization
Author(s): Patrick Michael Martens; Shigeki Yamamoto; Kunishige Edamatsu; Yasunori Uetani; Laurent Pain; Ramiro Palla; Matthew F. Ross; William R. Livesay
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Novel high-performance ArF resist for sub-100-nm lithography
Author(s): Geunsu Lee; Cha-Won Koh; Jae Chang Jung; Min-Ho Jung; Keun-Kyu Kong; Jin-Soo Kim; Ki-Soo Shin; Se-Jin Choi; Yang-Sook Kim; Yong-Jun Choi; Deog-Bae Kim
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Novel hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate for 193-nm resist compositions
Author(s): M. Dalil Rahman; Douglas S. McKenzie; Jun-Bom Bae; Takanori Kudo; Woo-Kyu Kim; Munirathna Padmanaban; Ralph R. Dammel
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Optimization of ArF resist for 100-nm node: DOE and fine-tuning of basic platform
Author(s): Keeho Kim; Gregory M. Wells; Won D. Kim; Yong-Jun Choi; Se-Jin Choi; Yang-Sook Kim; Deog-Bae Kim
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CD changes of 193-nm resists during SEM measurement
Author(s): Takanori Kudo; Jun-Bom Bae; Ralph R. Dammel; Woo-Kyu Kim; Douglas S. McKenzie; M. Dalil Rahman; Munirathna Padmanaban; Waiman Ng
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Investigation on the mechanism of the 193-nm resist linewidth reduction during the SEM measurement
Author(s): ChungHsi J. Wu; Wu-Song Huang; K. Rex Chen; Charles N. Archie; Mark E. Lagus
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Process optimization for sub-100-nm gate patterns using phase edge lithography
Author(s): Koen van Ingen Schenau; Bert Vleeming; Wendy F.J. Gehoel-van Ansem; Patrick Wong; Geert Vandenberghe
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193-nm contact photoresist reflow feasibility study
Author(s): Kevin D. Lucas; Mark Slezak; Monique Ercken; Frieda Van Roey
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Development of resists for thermal flow process applicable to mass production
Author(s): Yool Kang; Sang-Gyun Woo; Sang-Jun Choi; Joo-Tae Moon
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Novel routes toward sub-70-nm contact windows by using new KrF photoresist
Author(s): Jin-Soo Kim; Cha-Won Koh; Geunsu Lee; Jae Chang Jung; Ki-Soo Shin
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High resolution patterning in chemically amplified resists: the effect of film thickness
Author(s): David R. Medeiros; Wayne M. Moreau; Karen E. Petrillo; Maharshi Chauhan; Wu-Song Huang; Christopher Magg; Dario L. Goldfarb; Marie Angelopoulos; Paul F. Nealey
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Resist composition effects on ultimate resolution of negative-tone chemically amplified resists
Author(s): Laurent Pain; C. Gourgon; K. Patterson; B. Scarfogliere; Serge V. Tedesco; Gilles L. Fanget; B. Dal'zotto; M. Ribeiro; Tadashi Kusumoto; Masumi Suetsugu; Ryotaro Hanawa
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Integration of ultrathin resist processes into MPU IC manufacturing flows
Author(s): Jonathan L. Cobb; Will Conley; Todd Guenther; Fred Huang; Jen-Jiang Lee; Tom Lii; S. Dakshina-Murthy; Colita Parker; Saifi Usmani; Wei Wu; Scott Daniel Hector
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Polymer design for 157-nm chemically amplified resists
Author(s): Hiroshi Ito; Gregory M. Wallraff; Phillip J. Brock; Nicolette Fender; Hoa D. Truong; Gregory Breyta; Dolores C. Miller; Mark H. Sherwood; Robert D. Allen
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Experimental VUV absorbance study of fluorine-functionalized polystyrenes
Author(s): Roderick R. Kunz; Roger F. Sinta; Michael Sworin; William A. Mowers; Theodore H. Fedynyshyn; Vladimir Liberman; Jane E. Curtin
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High-resolution fluorocarbon-based resist for 157-nm lithography
Author(s): Theodore H. Fedynyshyn; Roderick R. Kunz; Roger F. Sinta; Michael Sworin; William A. Mowers; Russell B. Goodman; Scott P. Doran
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Encapsulated inorganic resist technology applied to 157-nm lithography
Author(s): Theodore H. Fedynyshyn; Roger F. Sinta; Michael Sworin; Russell B. Goodman; Scott P. Doran; I. Sondi; Egon Matijevic
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Silicon-containing resists for 157-nm applications
Author(s): Ratnam Sooriyakumaran; Debra Fenzel-Alexander; Nicolette Fender; Gregory M. Wallraff; Robert D. Allen
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New polymer for 157-nm single-layer resist based on fluorine-containing acryl copolymer
Author(s): Toshiyuki Ogata; Koutaro Endo; Hiroshi Komano; Toshimasa Nakayama
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Characterization of thin and ultrathin polymer and resist films
Author(s): Dario L. Goldfarb; Qinghuang Lin; Marie Angelopoulos; Christopher L. Soles; Eric K. Lin; Wen-li Wu
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Perfect photoresist for 157nm imaging
Author(s): Will Conley; Jeff D. Byers; Kim R. Dean; Steven G. Hansen; Jo Finders; Stephan Sinkwitz
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Transparent resins for 157-nm lithography
Author(s): Ralph R. Dammel; Raj Sakamuri; Andrew R. Romano; Richard Vicari; Cheryl Hacker; Will Conley; Daniel A. Miller
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Application of top surface imaging process to 157-nm lithography
Author(s): Isao Satou; Manabu Watanabe; Hiroyuki Watanabe; Toshiro Itani
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Resist materials for 157-nm lithography
Author(s): Minoru Toriumi; Seiichi Ishikawa; Seiro Miyoshi; Takuya Naito; Tamio Yamazaki; Manabu Watanabe; Toshiro Itani
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Effect of fluorinated monomer unit introduction to KrF resin system in F2 lithography
Author(s): Yasunori Uetani; Kazuhiko Hashimoto; Yoshiko Miya; Isao Yoshida; Mikio Takigawa; Ryotaro Hanawa
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Resist materials for 157-nm microlithography: an update
Author(s): Raymond Jui-Pu Hung; Hoang Vi Tran; Brian C. Trinque; Takashi Chiba; Shintaro Yamada; Daniel Sanders; Eric F Connor; Robert H. Grubbs; John M. Klopp; Jean M. J. Frechet; Brian H. Thomas; Gregory John Shafer; Darryl D DesMarteau; Will Conley; C. Grant Willson
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Theoretical calculations of photoabsorption of several alicyclic molecules in the vacuum ultraviolet region
Author(s): Nobuyuki N. Matsuzawa; Akihiko Ishitani; David A. Dixon; Tsuyoshi Uda
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Top surface imaging at 157-nm
Author(s): Andrew Thomas Jamieson; Mark H. Somervell; Hoang Vi Tran; Raymond Jui-Pu Hung; Scott A. MacDonald; C. Grant Willson
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Characterization of new aromatic polymers for 157-nm photoresist applications
Author(s): Nicolette Fender; Phillip J. Brock; W. Chau; S. Bangsaruntip; Arpan P. Mahorowala; Gregory M. Wallraff; William D. Hinsberg; Carl E. Larson; Hiroshi Ito; Gregory Breyta; Kikue Burnham; Hoa D. Truong; P. Lawson; Robert D. Allen
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157-nm imaging using thick single-layer resists
Author(s): Michael K. Crawford; Andrew E. Feiring; Jerald Feldman; Roger H. French; Viacheslav A. Petrov; Frank L. Schadt; Robert J. Smalley; Fredrick C. Zumsteg
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Effect of development process time on the surface of photoresist with various chemical compositions investigated by atomic force microscopy
Author(s): Chang Hyun Ko; Seok-Hwan Oh; Jae-Hwan Kim; Chang-Lyong Song; Sang-In Lee
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Continuous metal removal technique for resist resins
Author(s): Stan F. Wanat; Douglas S. McKenzie; M. Dalil Rahman
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Resist rehydration during thick film processing
Author(s): Octavia P. Lehar; Mark A. Spak; Stephen Meyer; Ralph R. Dammel; Colin J. Brodsky; C. Grant Willson
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Development of an edge bead remover (EBR) for thick films
Author(s): Joseph E. Oberlander; Ernesto S. Sison; Craig Traynor; Jeff Griffin
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Novel photoacid generators for chemically amplified resists with g-line, i-line, and DUV exposure
Author(s): Toshikage Asakura; Hitoshi Yamato; Akira Matsumoto; Masaki Ohwa
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Spin coating properties of SU-8 thick-layer photoresist
Author(s): Ren-Haw Chen; Chao-Min Cheng
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Reduction of internal stress in a SU-8-like negative tone photoresist for MEMS applications by chemical modification
Author(s): Ralf Ruhmann; Gisela Ahrens; Antje Schuetz; Jeanine Voskuhl; Gabi Gruetzner
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Photolithographic evaluation of various photoresist materials for mask-making applications
Author(s): Birender Singh; Warren Montgomery
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Novel CA resists with photoacid generator in polymer chain
Author(s): Hengpeng Wu; Kenneth E. Gonsalves
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Investigation on dissolution rate effect of newly prepared polystyrene copolymer on the profiles of DUV resists
Author(s): Hyun-Jin Kim; Yoon-Sik Chung; Yong-Jun Choi; Yang-Sook Kim; Deog-Bae Kim
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Novel deep UV photoresist with thermally crosslinkable photoacid generator
Author(s): Chang-Ho Noh; Sang-Kyun Lee; Bongsuk Moon; Kenji Honda
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Rational design of bleachable nonchemically amplified DUV photoactive compounds
Author(s): Benjamen M. Rathsack; Peter I. Tattersall; Cyrus Emil Tabery; Kathleen Lou; Timothy B. Stachowiak; David R. Medeiros; Jeff A. Albelo; Peter Y. Pirogovsky; Dennis R. McKean; C. Grant Willson
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BiIn: a sensitive bimetallic thermal resist
Author(s): Glenn H. Chapman; Richard Yuqiang Tu; Marinko V. Sarunic; Jagjot Dhaliwal
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Novel develop application method to improve critical dimension control
Author(s): Kazuo Sakamoto
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Thin resist process having high dry-etching resistance in 0.13-um KrF lithography
Author(s): Minoru Watanabe; Suguru Sasaki; Sachiko Yabe; Takashi Taguchi
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Novel negative photoresist process for 0.18 um dual damascene
Author(s): Lin-Hung Shiu; Chih-Ming Lai; Fu-Jye Liang; Hung-Chun Chen; Li-Jui Chen; Shuo-Yen Chou
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Development of DUV resists for zero angle and angled implant applications
Author(s): Patricia Fallon; Michael Francis Cronin; Joseph Lachowski; Pasquale R. Valerio; Larry Bachetti; Jacque H. Georger; Mike Mori; David N. Tomes; Kim Wynja
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Advanced KrF chemical amplified photoresists for 0.13-um lithography
Author(s): Qunying Lin; Michael J. Sack
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Formulation optimizations for variable DUV resist thickness applications based on the same polymer matrix
Author(s): Karin R. Schlicht; Brian Maxwell; John E. Ferri; Medhat A. Toukhy
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Dependence of resist profile on exposed area ratio
Author(s): Eishi Shiobara; Daisuke Kawamura; Kentaro Matsunaga; Yasunobu Onishi
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Evaluation of I-line and DUV photoresists for high-density optical disc mastering
Author(s): Roland Tacken; Elise C Rodenburg; Mark van der Veer; Jos H.C. van Vegchel; Richard Eijmberts
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Toward 0.1-um contact hole process by using water-soluble organic overcoating material (WASOOM)-- Resist flow technology III: study on WASOOM, top flare, and etch characterization
Author(s): Jun-Sung Chun; Chang Ho Maeng; Mark R Tesauro; John L. Sturtevant; Joseph E. Oberlander; Andrew R. Romano; John P. Sagan; Ralph R. Dammel
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Ar ion implantation into resist for etching resistance improvement
Author(s): Atsumi Yamaguchi; Akihiro Nakae; Kouichirou Tsujita
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Dissolution performance of device pattern with low-impact development
Author(s): Shinichi Ito; Kei Hayasaki; Hiroko Nakamura
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Novel 193-nm photoresist based on Olefin-containing lactones
Author(s): Kwang-Sub Yoon; Dong-Won Jung; Sook Lee; Sung-Ho Lee; Sang-Jun Choi; Sang-Gyun Woo; Joo-Tae Moon
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Effect of end group structures of methacrylate polymers on ArF photoresist performances
Author(s): Hikaru Momose; Shigeo Wakabayashi; Tadayuki Fujiwara; Kiyoshi Ichimura; Jun Nakauchi
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Lithographic behavior of carboxylate-based dissolution inhibitors and the effect of blending
Author(s): Francis M. Houlihan; Zhenglin Yan; Elsa Reichmanis; Gary Dabbagh; Kevin J. Bolan; Omkaram Nalamasu; Ilya L. Rushkin; Ognian N. Dimov
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Investigation of electron beam stabilization of 193-nm photoresists
Author(s): Myoung-Soo Kim; Jong-Woon Park; Hak-Joon Kim; Bum-Jin Jun; Myung-Goon Gil; Bong-Ho Kim; Matthew F. Ross; William R. Livesay
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Negative-tone cycloolefin photoresist for 193-nm lithography
Author(s): ShihChi Fu; Kuo-Huang Hsieh; Lon A. Wang
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Sumitomo resist on various BARC substrates using SVGL micrascan 193
Author(s): Martha M. Rajaratnam; Greg H. Baxter; Mark Riggs; Pedro Tasaico; John D. Zimmerman; James V. Beach; P. Holland; Chris Morris; Kyle Spurlock
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Design and performance of photoresist materials for ArF lithography
Author(s): Hyun-Woo Kim; Dong-Won Jung; Sook Lee; Sang-Jun Choi; Sang-Gyun Woo; Robert J. Kavanagh; George G. Barclay; Robert F. Blacksmith; Doris Kang; Gerd Pohlers; James F. Cameron; Joe Mattia; Stefan Caporale; Thomas Penniman; Lori Anne Joesten; James W. Thackeray
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Postmodification as a way to improve the lithographic performance of resist materials
Author(s): Wenjie Li; Pushkara Rao Varanasi; Margaret C. Lawson; Timothy Hughes; George M. Jordhamo; Robert D. Allen; Hiroshi Ito
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ArF resist for contact hole application
Author(s): K. Rex Chen; Margaret C. Lawson; Timothy Hughes; William R. Brunsvold; Pushkara Rao Varanasi; Robin Keller; George M. Jordhamo
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Novel chemically amplified positive resist containing acetal-type crosslinker of poly(3,3'-dimethoxypropene) for 193-nm top surface imaging process
Author(s): Cha-Won Koh; Jae Chang Jung; Myoung-Soo Kim; Keun-Kyu Kong; Geunsu Lee; Min-Ho Jung; Jin-Soo Kim; Ki-Soo Shin
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Organic BARC process evaluation for via first dual-damascene patterning
Author(s): Cher-Huan Tan; Moitreyee Mukherjee-Roy; Woo-Min Jo; Rakesh Kumar; Pang Dow Foo; Santhanesh Sathappan; Siew Wei Ngooi
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Development of 193-nm organic BARC
Author(s): Takahiro Kishioka; Shinya Arase; Kazuhisa Ishii; Kenichi Mizusawa; Hiroyoshi Fukuro
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High-etch-rate type 248-nm bottom antireflective coatings
Author(s): Tomoyuki Enomoto; Shinya Arase; Kenichi Mizusawa; Hiroyoshi Fukuro
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New fast-etching bottom antireflective coatings for 248-nm lithography
Author(s): Rama Puligadda; Runhui Huang; Chris Cox; James E. Lamb; Manuel Arjona; James B. Claypool
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Development of full-fill bottom antireflective coatings for dual-damascene process
Author(s): Yubao Wang; Xiaoming Wu; Gu Xu; James E. Lamb; John Sullivan; James B. Claypool; Jackie Backus; Sean Trautman; Xie Shao; Satoshi Takei; Yasuhisa Sone; Kenichi Mizusawa; Hiroyoshi Fukuro
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Improved crosslinkable polymeric binders for 193-nm bottom antireflective coatings (BARCs)
Author(s): James D. Meador; Xie Shao; Mandar Bhave; Chris Cox; John Thompson; Debra L. Thomas; Stephen Gibbons; Ashley Farnsworth; Michael D. Rich
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Novel conformal organic antireflective coatings for advanced I-line lithography
Author(s): Shreeram V. Deshpande; Kelly A. Nowak; Shelly Fowler; Paul Williams; Mikko Arjona
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Planarizing ARs for dual-damascene processing
Author(s): Edward K. Pavelchek; Marjorie Cernigliaro; Peter Trefonas; Amy Kwok; Suzanne Coley
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SU8C resist for electron beam lithography
Author(s): Wing Han Wong; Edwin Y. B. Pun
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New advances in resist system for next-generation lithography
Author(s): Yongqi Hu; Wei He; Kenneth E. Gonsalves; Lhadi Merhari
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Creation of low-molecular-weight organic resists for nanometer lithography
Author(s): Toshiaki Kadota; Motoko Yoshiiwa; Hiroshi Kageyama; Fujio Wakaya; Kenji Gamo; Yasuhiko Shirota
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Photolithographic evaluation of deep UV resist materials for mask-making applications
Author(s): Warren Montgomery; Alex H. Buxbaum; William Rodrigues; Jeff A. Albelo; Scott E. Fuller
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Control of line edge roughness of ultrathin resist films subjected to EUV exposure
Author(s): Manhyoung Ryoo; Shigeru Shirayone; Hiroaki Oizumi; Nobuyuki N. Matsuzawa; Shigeo Irie; Ei Yano; Shinji Okazaki
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Improved notch model for resist dissolution in lithography simulation
Author(s): Stewart A. Robertson; Edward K. Pavelchek; Wolfgang Hoppe; Robert Wildfeuer
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Improved resolution of thick film resist (verification by simulation)
Author(s): Yoshihisa Sensu; Atsushi Sekiguchi; Yasuhiro Miyake
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Simulation of 193-nm photoresists based on different polymer platforms
Author(s): Doris Kang; Stewart A. Robertson; Edward K. Pavelchek
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Development of a bond contribution model for structure: property correlations in dry etch studies
Author(s): Tianyue Yu; Philip Ching; Christopher Kemper Ober; Shreeram V. Deshpande; Rama Puligadda
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Quantitative description of phenolic polymer dissolution using the concept of gel layer
Author(s): Se-Jin Choi; Joon Yeon Cho
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Modification of development parameters of 193-nm chemically amplified resist with pattern density
Author(s): Eun-Jung Seo; Young-Soo Sohn; Heungin Bak; Hye-Keun Oh; Sang-Gyun Woo; Nakgeuon Seong; Hanku Cho
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Analysis of the relation between exposure parameters and critical dimension by response surface model
Author(s): Dong-Soo Sohn; Young-Soo Sohn; Heungin Bak; Hye-Keun Oh
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Survey of chemically amplified resist models and simulator algorithms
Author(s): Ebo H. Croffie; Lei Yuan; Mosong Cheng; Andrew R. Neureuther
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Three-dimensional post-exposure modeling and its applications
Author(s): Lei Yuan; Mosong Cheng; Ebo H. Croffie; Andrew R. Neureuther
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Analysis of deprotection reaction for chemically amplified resists by using FT-IR spectrometer with exposure tool
Author(s): Yasuhiro Miyake; Mariko Isono; Atsushi Sekiguchi
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Modeling the impact of thermal history during post-exposure bake on the lithographic performance of chemically amplified resists
Author(s): Mark D. Smith; Chris A. Mack; John S. Petersen
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Examination of a simplified reaction-diffusion model for post-exposure bake of chemically amplified resists
Author(s): Mark D. Smith; Chris A. Mack
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Understanding molecular-level effects during post-exposure processing
Author(s): Gerard M. Schmid; Mark D. Smith; Chris A. Mack; Vivek K. Singh; Sean D. Burns; C. Grant Willson
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Evaluation of the standard addition method to determine rate constants for acid generation in chemically amplified photoresist at 157 nm
Author(s): Adam Richard Pawloski; Charles R. Szmanda; Paul F. Nealey
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Dissolution behavior of fluoroalcohol-substituted polystyrenes
Author(s): Daniel S. Hall; Brian Osborn; Kyle Patterson; Sean D. Burns; C. Grant Willson
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Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization
Author(s): Masahiro Aoyagi; Shigemasa Segawa; EunSil Jung; Taro Itatani; Masanori Komuro; Tsuenenori Sakamoto; Hiroshi Itatani; Masataka Miyamura; Shunichi Matsumoto
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193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries
Author(s): Toru Kajita; Yukio Nishimura; Masafumi Yamamoto; Hiroyuki Ishii; A. Soyano; A. Kataoka; Mark Slezak; Makoto Shimizu; Pushkara Rao Varanasi; G. Jordahamo; Margaret C. Lawson; R. Chen; William R. Brunsvold; Wenjie Li; Robert D. Allen; Hiroshi Ito; Hoa D. Truong; Thomas I. Wallow
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Photoresist outgassing at 157 nm exposure
Author(s): Stefan Hien; Steve Angood; Dominic Ashworth; Steve Basset; Theodore M. Bloomstein; Kim R. Dean; Roderick R. Kunz; Daniel A. Miller; Shashikant Patel; Georgia K. Rich
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All Co2-processed 157-nm fluoropolymer-containing photoresist systems
Author(s): Christopher L. McAdams; Devin Flowers; Erik N. Hoggan; Ruben G. Carbonell; Joseph M. DeSimone
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Line-edge roughness in positive-tone chemically amplified resists: effect of additives and processing conditions
Author(s): Qinghuang Lin; Dario L. Goldfarb; Marie Angelopoulos; Suresh R Sriram; Jeffrey S. Moore
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Mechanism studies of scanning electron microscope measurement effects on 193-nm photoresists and the development of improved line-width measurement methods
Author(s): T. R. Sarrubi; Matthew F. Ross; Mark Neisser; Thomas Kocab; Bernard T. Beauchemin; William R. Livesay; Selmer S. Wong; Waiman Ng
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