On-product overlay solutions for DUV and EUV mix-scanner usage in an EPE-driven patterning world

D. M. Slotboom; P. Hinnen; J. Mulkens

doi:10.1117/12.2614537

26 May 2022 On-product overlay solutions for DUV and EUV mix-scanner usage in an EPE-driven patterning world

D. M. Slotboom, P. Hinnen, J. Mulkens

Proceedings Volume 12051, Optical and EUV Nanolithography XXXV; 120510L (2022) https://doi.org/10.1117/12.2614537
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

With EUV lithography moved into volume production, it allows for a reduction of manufacturing complexity by minimizing the amount of pattern splits for critical layers. A key metric describing patterning capability , the total Edge Placement Error (EPE), scales with the technology nodes. As discussed in previous papers, overlay and OPC requirements are requested to scale faster than the EPE metric, in order to allow more room for stochastics in the total EPE budget. While the on product overlay (OPO) performance requirements continue to scale, these need to be met in a mix-andmatch mode of EUV and immersion DUV scanners. In this paper we will examine both EPE and OPO requirements for DUV and EUV scanners for advanced nodes. We will describe how multiple overlay metrology sources can be used to infer scanner corrections, how these systems are set up against a common reference and how we maintain this ‘matched state’ over time. As stated, these overlay improvements link back to the EPE budget and thus to its other components. We will describe how an enhanced view on EPE contributors will allow us to combine cross domain degrees of correction, during layer setup and control. Moreover, this EPE component breakdown will enable the ability to monitor this ‘EPE state’ by combining various sources of metrology; ultimately high spatial EPE variations may lead to a different scanner setup state. The need to describe the stability of all EPE constitutes warrants combining e-beam inspection systems with scanner, optical and SEM metrology to support diverse overlay, CD and control use models and process fingerprint mapping.

Conference Presentation

Citation Download Citation

D. M. Slotboom, P. Hinnen, and J. Mulkens "On-product overlay solutions for DUV and EUV mix-scanner usage in an EPE-driven patterning world", Proc. SPIE 12051, Optical and EUV Nanolithography XXXV, 120510L (26 May 2022); https://doi.org/10.1117/12.2614537

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