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Proceedings Paper

Doping Characteristics Of ZnSe-ZnTe Strained Layer Superlattice Grown By Molecular Beam Epitaxy
Author(s): R. Kimura; S. Dosho; A. Imai; M. Kobayashi; M. Konagai; K. Takahashi
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Paper Abstract

In order to obtain both p- and n-type conduction in a wide-bandgap II-VI compound semiconductor, we have prepared ZnSe-ZnTe strained-layer superlattices (SLS) by MBE with a modulation doping technique. Modulation-doped superlattices were analyzed by photoluminescence (PL) and the van der Pauw method. The effect of strain on the film quality induced in the SLS structure by lattice mismatch was investigated. Furthermore, the SLS structure has been directly observed by Transmission Electron Microscopy (TEM).

Paper Details

Date Published: 11 August 1987
PDF: 5 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940827
Show Author Affiliations
R. Kimura, Tokyo Institute of Technology (Japan)
S. Dosho, Tokyo Institute of Technology (Japan)
A. Imai, Tokyo Institute of Technology (Japan)
M. Kobayashi, Tokyo Institute of Technology (Japan)
M. Konagai, Tokyo Institute of Technology (Japan)
K. Takahashi, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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