Share Email Print

Proceedings Paper

Electrical characterization of γ-Al2O3 thin film parallel plate capacitive sensor for trace moisture detection
Author(s): Lokesh Kumar; Shailesh Kumar; S. A. Khan; Tariqul Islam
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A moisture sensor was fabricated based on porous thin film of γ-Al2O3 formed between the parallel gold electrodes. The sensor works on capacitive technique. The sensing film was fabricated by dipcoating of aluminium hydroxide sol solution obtained from the sol-gel method. The porous structure of the film of γ-Al2O3 phase was obtained by sintering the film at 450 °C for 1 h. The electrical parameters of the sensor have been determined by Agilent 4294A impedance analyzer. The sensor so obtained is found to be sensitive in moisture range 100-600 ppmV. The response time of the sensor in ppmV range moisture is very low ~ 24 s and recovery time is ~ 37 s.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490X (15 October 2012);
Show Author Affiliations
Lokesh Kumar, Jamia Millia Islamia (Central Univ.) (India)
Shailesh Kumar, Jamia Millia Islamia (Central Univ.) (India)
S. A. Khan, Jamia Millia Islamia (Central Univ.) (India)
Tariqul Islam, Jamia Millia Islamia (Central Univ.) (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?