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Proceedings Paper

Mössbauer measurements on SnSe2
Author(s): I. Bibicu; A. Lőrinczi; M. Popescu
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Paper Abstract

Tin chalcogenides SnX2 and SnX, where X = S, Se and Te present a particularly interest for their electronic properties and applications in gas sensors. The state of tin in these materials is important for understanding of the sensing effect and improvement of the sensor performances. Mössbauer spectroscopy is a widely used technique for the analysis of the local electronic structure or chemical bonding in solids. In this paper we applied Mössbauer technique for the investigation of bulk and thin films of SnSe2 chalcogenide. The films of SnSe2 chalcogenide were obtained by the methods: PLD ("Pulsed laser deposition") and PED ("Pulsed electron deposition"). Mössbauer measurements were performed by transmission (TMS), respectively conversion electron spectroscopy (CEMS). By CEMS spectroscopy surfaces, coatings and thin films containing Sn can be studied on substrates and to various depths up to 1000 nanometers.

Paper Details

Date Published: 3 December 2010
PDF: 6 pages
Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 78210K (3 December 2010); doi: 10.1117/12.881773
Show Author Affiliations
I. Bibicu, National Institute for Materials Physics (Romania)
A. Lőrinczi, National Institute for Materials Physics (Romania)
M. Popescu, National Institute for Materials Physics (Romania)


Published in SPIE Proceedings Vol. 7821:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V
Paul Schiopu; George Caruntu, Editor(s)

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