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Proceedings Paper

Unseeded growth of CdZnTe:In by THM technique
Author(s): Utpal N. Roy; Stephen Weiller; Juergen Stein; Andrey Gueorguiev
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Paper Abstract

Travelling heater method (THM) has been a great success lately for the growth of large CdZnTe crystals. In this presentation, indium doped CdZnTe crystals have been grown adapting travelling heater method (THM) in vertical configuration, using three zone custom designed muffle furnace. Crystals have been grown with different ampoule diameter and size to study the grain growth. Seedless single crystalline CdZnTe:In crystals have been gown with 4 cm diameter weighing about 650 grams. Crystals have been characterized by near IR imaging, both microscopic and full wafer. The average resistivity along the length of the ingot was found to be about 109 ohm-cm. A resolution 3.2% was obtained at 662 keV. The effect of annealing of the whole wafer in Cd-Zn alloyed vapor on the resistivity and on the Te precipitations will be discussed.

Paper Details

Date Published: 11 September 2009
PDF: 5 pages
Proc. SPIE 7449, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI, 74490U (11 September 2009);
Show Author Affiliations
Utpal N. Roy, ICx Radiation (United States)
Stephen Weiller, ICx Radiation (United States)
Juergen Stein, ICx Radiation (United States)
Andrey Gueorguiev, ICx Radiation (United States)

Published in SPIE Proceedings Vol. 7449:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI
Ralph B. James; Larry A. Franks; Arnold Burger, Editor(s)

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