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Proceedings Paper

Development of spin-on carbon hardmasks with comparable etch resistance to Amorphous Carbon Layer (ACL)
Author(s): Hwan-Sung Cheon; Kyong-Ho Yoon; Min-Soo Kim; Seung Bae Oh; Jee-Yun Song; Nataliya Tokareva; Jong-Seob Kim; Tuwon Chang
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Paper Abstract

In recent microlithography of semiconductor fabrication, spin-on hardmask (SOH) process continue to gain popularity as it replaces the traditional SiON/ACL hardmask scheme which suffers from high CoO, low productivity, particle contamination, and layer alignment issues. In the SOH process, organic polymer with high carbon content is spin-cast to form a carbon hardmask film. In the previous papers, we reported the development of organic SOH materials and their application in sub-70 nm lithography. In this paper, we describe the synthesis of organic polymers with very high carbon contents (>92 wt.%) and the evaluation of the spin-coated films for the hardmask application. The high carbon content of the polymer ensures improved etch resistance which amounts to >90% of ACL's resistance. However, as the carbon content of the polymers increases, the solubility in common organic solvents becomes lower. Here we report the strategies to improve the solubility of the high carbon content resins and optimization of the film properties for the SOH application.

Paper Details

Date Published: 4 December 2008
PDF: 8 pages
Proc. SPIE 7140, Lithography Asia 2008, 71402R (4 December 2008); doi: 10.1117/12.804635
Show Author Affiliations
Hwan-Sung Cheon, SAMSUNG Cheil Industries, Inc. (South Korea)
Kyong-Ho Yoon, SAMSUNG Cheil Industries, Inc. (South Korea)
Min-Soo Kim, SAMSUNG Cheil Industries, Inc. (South Korea)
Seung Bae Oh, SAMSUNG Cheil Industries, Inc. (South Korea)
Jee-Yun Song, SAMSUNG Cheil Industries, Inc. (South Korea)
Nataliya Tokareva, SAMSUNG Cheil Industries, Inc. (South Korea)
Jong-Seob Kim, SAMSUNG Cheil Industries, Inc. (South Korea)
Tuwon Chang, SAMSUNG Cheil Industries, Inc. (South Korea)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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