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Proceedings Paper

Designs for micro-structured semiconductor neutron detectors
Author(s): J. Kenneth Shultis; Douglas S. McGregor
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Paper Abstract

Perforated semiconductor diode detectors have been under development for several years at Kansas State University for a variety of neutron detection applications. The fundamental device configuration is a pin diode detector fabricated from high-purity float-zone refined Si wafers. Perforations are etched into the diode surface with inductively-coupled plasma reactive ion etching and backfilled with 6LiF neutron reactive material. The perforation shapes and depths can be optimized to yield a flat response to neutrons over a wide variation of angles. The intrinsic thermal neutron detection efficiency depends strongly upon the geometry, size, and depth of the perforations. Here three basic geometry models are compared. The energy deposition spectra and detection efficiency are estimated for rod-shaped perforations, linear trench perforations and for perforations leaving silicon pillars. These three designs are found to have distinct differences in their capabilities. Besides model calculations, practical considerations for fabricating such neutron detectors are also discussed.

Paper Details

Date Published: 10 September 2008
PDF: 15 pages
Proc. SPIE 7079, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X, 707906 (10 September 2008); doi: 10.1117/12.797477
Show Author Affiliations
J. Kenneth Shultis, Kansas State Univ. (United States)
Douglas S. McGregor, Kansas State Univ. (United States)

Published in SPIE Proceedings Vol. 7079:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X
Arnold Burger; Larry A. Franks; Ralph B. James, Editor(s)

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