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Proceedings Paper

Defect printability study using EUV lithography
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Paper Abstract

Defect-free masks are one of the top issues for enabling EUV lithography at the 32-nm node. Since a defect-free process cannot be expected, an understanding of the defect printability is required in order to derive critical defect sizes for the mask inspection and repair. Simulations of the aerial image are compared to the experimental printing in resist on the wafer. Strong differences between the simulations and the actual printing are observed. In particular the minimum printable defect size is much larger than expected which is explained in terms of resist resolution. The defect printability in the current configuration is limited by the resist process rather than the projection optics.

Paper Details

Date Published: 23 March 2006
PDF: 10 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510U (23 March 2006); doi: 10.1117/12.656386
Show Author Affiliations
Christian Holfeld, Advanced Mask Technology Ctr. (Germany)
Karsten Bubke, Advanced Mask Technology Ctr. (Germany)
Falk Lehmann, Advanced Mask Technology Ctr. (Germany)
Bruno La Fontaine, Advanced Micro Devices (United States)
Adam R. Pawloski, Advanced Micro Devices (United States)
Siegfried Schwarzl, Infineon Technologies (Germany)
Frank-Michael Kamm, Infineon Technologies (Germany)
Thomas Graf, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Andreas Erdmann, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)

Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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