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Proceedings Paper

Optical characterization of ZnO and ZnMgO films on a-plane sapphires by molecular beam epitaxy
Author(s): Shuwei Li; Cairong Ding; Guowei Yang; Xiang Zhou; Kazuto Koike
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Paper Abstract

Recently the growth techniques of single-crystalline ZnO film promote much attention to ZnO-related materials for electronic and optoelectronic applications. ZnO and ZnMgO films were grown by radical-source molecular beam epitaxy, and the epilays on a-plane sapphire substrates had a superior quality in crystallographic, optical and electrical properties. The surface during growth was monitored by a reflection high-energy electron diffraction (RHEED) system. After the growth, these films were characterized by Field emission scanning electronic miroscopy, transmission spectrum, photoluminescence (PL) using 325 nm line of a He-Cd laser, and electrical properties were measured by Hall measurement. The n-type doping with Al was successfully performed up to 5 × 1019 cm-3. Widening of bandgap energy by increasing Mg composition was observed by transmission spectrum.

Paper Details

Date Published: 12 January 2005
PDF: 5 pages
Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); doi: 10.1117/12.570751
Show Author Affiliations
Shuwei Li, Zhongshan Univ. (China)
Cairong Ding, Zhongshan Univ. (China)
Guowei Yang, Zhongshan Univ. (China)
Xiang Zhou, Zhongshan Univ. (China)
Kazuto Koike, Osaka Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 5632:
Light-Emitting Diode Materials and Devices
Gang Yu; Chuangtian Chen; Changhee Lee, Editor(s)

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