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Proceedings Paper

Phases transformation in Ti(Ta)-Ni(Co)-Si-N systems
Author(s): I. A. Horin; Alexander A. Orlikovsky; A. G. Vasiliev; A. L. Vasiliev
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Paper Abstract

Investigations of the Ti-Co, Ti-Ni and Ta-Ni thin films produced by magnetron co-sputtering and electron beam co-evaporation on Si substrates heated to 700-800° in nitrogen ambient with and without buffer layers are described. The TEM data show clear phase separation of TaN and NiSi2 for the Ta-Ni film deposited in a high N2 pressure ambient. Deposition at lower N2 pressure led to the formation of a mixed Ni-Ta-Si layer. The phase separation effect was absent for Ni-Ti films at high N2 pressure. The presence of buffer layers strongly affected the surface diffusion reactions in the Co-Ti-Si system. Formation of Ti-(O) or CoSix amorphous layers at the Si surface prevented the interdiffusion of Si and Co, such that even pure Co or Co2Si layers could be formed.

Paper Details

Date Published: 28 May 2004
PDF: 9 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557297
Show Author Affiliations
I. A. Horin, Institute of Physics and Technology (Russia)
Alexander A. Orlikovsky, Institute of Physics and Technology (Russia)
Moscow State Institute of Radioengineering, Electronics and Automation (Russia)
A. G. Vasiliev, Institute of Physics and Technology (Russia)
A. L. Vasiliev, Institute of Crystallography (Russia)
Univ. of Connecticut (United States)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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