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Proceedings Paper

Studies of piezoresistance in Ge-Si whiskers at cryogenic temperatures
Author(s): Anatolij A. Druzhinin; I. P. Ostrovskii; Elena Lavitska; Natalya Liakh; Tomasz Palewski
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Paper Abstract

The present paper deals with studies of deformation influence on GexSi1-x (x = 0.01 ÷ 0.03) whiskers conduction in the temperature range 4.2 ÷ 300 K. The whiskers were grown by chemical vapor deposition method in a sealed bromide system with use of Au and B dopants. The whiskers with resistivity ρ = 0.005 ÷ 0.025 Ω•cm were investigated. The values of resistivity corresponded to the impurity concentrations in the vicinity of the metal-insulator transition. The strain was imposed by the whisker mounting on specially selected substrates (quartz, copper, aluminum) with thermal expansion coefficient different from that in Si-Ge material. The 'giant' piezoresistance was found in the specimens at cryogenic temperatures. Estimated longitudinal gauge factor G <111> = Δρ/(ρoε) is equal to 10.000 ÷ 30.000 at 4.2 K in the whiskers with resistivity ρ = 0.012 ÷ 0.018 Ω•cm. From σ = f(1/T) curves activation energies for the hopping conductance in the whiskers have been calculated. Possible reasons of the obtained phenomena are discussed.

Paper Details

Date Published: 22 October 2003
PDF: 6 pages
Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.519666
Show Author Affiliations
Anatolij A. Druzhinin, Lviv Politechnic Univ. (Ukraine)
I. P. Ostrovskii, Lviv Politechnic Univ. (Ukraine)
Elena Lavitska, Lviv Politechnic Univ. (Ukraine)
Natalya Liakh, Lviv Politechnic Univ. (Ukraine)
Tomasz Palewski, International Lab. of High Magnetic Fields and Low Temperatures (Poland)

Published in SPIE Proceedings Vol. 5136:
Solid State Crystals 2002: Crystalline Materials for Optoelectronics
Jaroslaw Rutkowski; Antoni Rogalski, Editor(s)

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