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Proceedings Paper

Life is better without nonorthogonal or non-45-deg. edges: a practical solution to alleviate the pain on OPC and mask writing
Author(s): Eric C. Lynn; Shih-Ying Chen
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Paper Abstract

Layouts of semiconductor integrated circuits are composed of polygons. Ideally, all edges of polygons are either orthogonal or 45-degree with respect to the layout coordinate axes. Yet there are cases that non-ideal edges, which are not orthogonal or 45-degree, exist in layouts. From the perspective of data preparation, benefits can be obtained to exclude those non-orthogonal and non-45 degree edges in chip layouts, since the existence of non-ideal edges will have negative impacts on both mask fracturing and the optical proximity correction process. In addition, e-beam writing time could be significantly prolonged with the presence of non-ideal edges. Currently, most design rule check tools are able to locate non-ideal edges. However, there is not any generic solution available for those non-ideal edges. In the present study, an algorithm was developed to renovate those non-ideal edges of chip layouts. A major success criterion that must be fulfilled is that any additional data process is not allowed to alter the original device behavior. Therefore, the renovation process must be made of as minimal change as possible. The present algorithm is implemented in the C language, which makes it generic to be easily incorporated into most layout tools. Several illustrative cases were used to examine the present algorithm. Finding the best solution with the minimal edge movement among those non-unique solutions was also addressed with theoretical discussion.

Paper Details

Date Published: 1 August 2002
PDF: 9 pages
Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476934
Show Author Affiliations
Eric C. Lynn, Mentor Graphics Taiwan Ltd. (Taiwan)
Shih-Ying Chen, Mentor Graphics Taiwan Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 4754:
Photomask and Next-Generation Lithography Mask Technology IX
Hiroichi Kawahira, Editor(s)

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