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Proceedings Paper

Development of high-power EUV sources for lithography
Author(s): Vladimir M. Borisov; Imtiaz Ahmad; S. Goetze; Alexander S. Ivanov; Oleg B. Khristoforov; Juergen Kleinschmidt; Vladimir Korobotchko; Jens Ringling; Guido Schriever; Uwe Stamm; Aleksandr Yu. Vinokhodov
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Paper Abstract

We report on the experimental status of the development of gas discharge produced plasma EUV sources for lithography based on the Z-pinch concept. The plasma size of approximately 1.3 mm X 1.5 mm has been matched to come close to the requirements resulting from the etendue of the optical system. The spatial stability of the plasma size as well as the plasma center is better than 15 percent standard deviation. The solid angle of emission is 1.8 sr, i.e. +/- 45 deg. The sources can be operated continuously at 1000 Hz repetition frequency and provide an EUV in-band power of 10 W in 1.8 sr. Spectral measurements providing in-band and out-of-band spectral distribution of the source are discussed.

Paper Details

Date Published: 1 July 2002
PDF: 8 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472338
Show Author Affiliations
Vladimir M. Borisov, Troitsk Institute for Innovation and Fusion Research (Russia)
Imtiaz Ahmad, XTREME technologies GmbH (Germany)
S. Goetze, XTREME technologies GmbH (Germany)
Alexander S. Ivanov, Troitsk Institute for Innovation and Fusion Research (Russia)
Oleg B. Khristoforov, Troitsk Institute for Innovation and Fusion Research (Russia)
Juergen Kleinschmidt, XTREME technologies GmbH (Germany)
Vladimir Korobotchko, XTREME technologies GmbH (Germany)
Jens Ringling, XTREME technologies GmbH (Germany)
Guido Schriever, XTREME technologies GmbH (Germany)
Uwe Stamm, XTREME technologies GmbH (Germany)
Aleksandr Yu. Vinokhodov, Troitsk Institute for Innovation and Fusion Research (Russia)

Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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