
Proceedings Paper
First environmental data from the EUV engineering test standFormat | Member Price | Non-Member Price |
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Paper Abstract
The first environmental data from the Engineering Test Stand (ETS) has been collected. Excellent control of high-mass hydrocarbons has been observed. This control is a result of extensive outgas testing of components and materials, vacuum compatible design of the ETS, careful cleaning of parts and pre-baking of cables and sub assemblies where possible, and clean assembly procedures. As a result of the hydrocarbon control, the residual ETS vacuum environment is rich in water vapor. Analysis of witness plate data indicates that the ETS environment does not pose a contamination risk to the optics in the absence of EUV irradiation. However, with EUV exposure, the water rich environment can lead to EUV- induced water oxidation of the Si-terminated Mo/Si optics. Added ethanol can prevent optic oxidation, allowing carbon growth via EUV cracking of low-level residual hydrocarbons to occur. The EUV environmental issues are understood, mitigation approaches have been validated, and EUV optic contamination appears to be manageable.
Paper Details
Date Published: 20 August 2001
PDF: 5 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436676
Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)
PDF: 5 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436676
Show Author Affiliations
Leonard E. Klebanoff, Sandia National Labs. (United States)
Michael E. Malinowski, Sandia National Labs. (United States)
Philip A. Grunow, Sandia National Labs. (United States)
W. Miles Clift, Sandia National Labs. (United States)
Michael E. Malinowski, Sandia National Labs. (United States)
Philip A. Grunow, Sandia National Labs. (United States)
W. Miles Clift, Sandia National Labs. (United States)
Chip Steinhaus, Sandia National Labs. (United States)
Alvin H. Leung, Sandia National Labs. (United States)
Steven J. Haney, Sandia National Labs. (United States)
Alvin H. Leung, Sandia National Labs. (United States)
Steven J. Haney, Sandia National Labs. (United States)
Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)
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