The film formation thinner than a few ten nano-meters, called ultra-thin films, has been the indispensable technology to develop various electronic devices. This paper describes the ultra-thin film forming process and properties of an Al₂O₃ film deposited mainly. The films of a few nano-meter thickness and nearly mono-atomic layer were formed by the excimer laser ablation. The ceramics film and multi-layer film were deposited on a Si wafer and a plate glass substrate at room temperature in the extremely high vacuum atmosphere. Surface roughness of the film was less than 1 nm and no defects of small holes and micro-cracks were found in the film of 2.6 nm thickness by measuring tunneling current at liquid N₂ temperature.

Date Published: 20 September 1999
PDF: 6 pages
Proc. SPIE 3822, Computer-Controlled Microshaping, (20 September 1999); doi: 10.1117/12.364237

Published in SPIE Proceedings Vol. 3822:
Computer-Controlled Microshaping
Vadim P. Veiko; Tamas Szoerenyi, Editor(s)