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Proceedings Paper

Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs)
Author(s): Serguei An; W. R. Clark; M. Jamal Deen; Anthony S. Vetter; M. Svilans
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Paper Abstract

Multiplied shot nose and gain-voltage characteristics of separate absorption, grading, charge and multiplication avalanche photodiodes were measured at 25 degrees C in a gain range of 3 to 30. Low optical input powers and a small spot size were used in order to minimize gain saturation effects and gain non-uniformity within the spot. The InP multiplication layer thickness and charge sheet density were extracted from capacitance - voltage characteristics and confirmed by SIMS. Electron and hole impact ionization coefficients in InP were then extracted using gain-voltage characteristics and McIntyre's expressions. Possible deep level traps within the InP multiplication layer were characterized using temperature and frequency characteristics of capacitance - voltage measurements. Peripheral and active area capacitances were separated by studying devices with different active area diameters.

Paper Details

Date Published: 8 April 1998
PDF: 12 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304505
Show Author Affiliations
Serguei An, Nortel Technology Ltd. (Canada) and Simon Fraser Univ. (Canada)
W. R. Clark, Nortel Technology Ltd. (Canada)
M. Jamal Deen, Simon Fraser Univ. (Canada)
Anthony S. Vetter, Nortel Technology Ltd. (Canada)
M. Svilans, Nortel Technology Ltd. (Canada)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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