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Plasma antennas formed in a Ge crystal under laser irradiation
Author(s): N. N. Bogachev; N. G. Gusein-zade; S. A. Filatova; V. A. Kamynin; S. Yu. Kazantsev; S. V. Podlesnykh; V. E. Rogalin; D. V. Shokhrin; A. I. Trikshev; V. B. Tsvetkov; I. V. Zhluktova
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Paper Abstract

The possibilities of using plasma formed by laser radiation in Ge- and Si semiconductors to create plasma antennas are analyzed. The dependences of the amplitude of the emitted microwave signal in the range of 6-7.5 GHz on the laser power and the length of the irradiated section on the semiconductor plate, which served as a transmitting vibrating antenna, were obtained. It is shown that the amplitude of the transmitted signal during the formation of a plasma antenna in Si and Ge crystals can be increased by more than an order of magnitude. The proposed method for creating a semiconductor plasma antenna with initiation by laser radiation has great prospects for creating materials with controlled electromagnetic characteristics in the radio, microwave and THz spectral ranges.

Paper Details

Date Published: 11 December 2019
PDF: 9 pages
Proc. SPIE 11322, XIV International Conference on Pulsed Lasers and Laser Applications, 113221P (11 December 2019); doi: 10.1117/12.2553483
Show Author Affiliations
N. N. Bogachev, Prokhorov General Physics Institute (Russian Federation)
MIREA - Russian Technological Univ. (Russian Federation)
Pirogov Russian National Research Medical Univ. (Russian Federation)
N. G. Gusein-zade, Prokhorov General Physics Institute (Russian Federation)
Pirogov Russian National Research Medical Univ. (Russian Federation)
S. A. Filatova, Prokhorov General Physics Institute (Russian Federation)
V. A. Kamynin, Prokhorov General Physics Institute (Russian Federation)
S. Yu. Kazantsev, Prokhorov General Physics Institute (Russian Federation)
S. V. Podlesnykh, MIREA - Russian Technological Univ. (Russian Federation)
V. E. Rogalin, Institute of Electrophysics and Electricity (Russian Federation)
D. V. Shokhrin, MIREA - Russian Technological Univ. (Russian Federation)
A. I. Trikshev, Prokhorov General Physics Institute (Russian Federation)
V. B. Tsvetkov, Prokhorov General Physics Institute (Russian Federation)
I. V. Zhluktova, Prokhorov General Physics Institute (Russian Federation)


Published in SPIE Proceedings Vol. 11322:
XIV International Conference on Pulsed Lasers and Laser Applications
Victor F. Tarasenko; Anton V. Klimkin; Maxim V. Trigub, Editor(s)

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