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Proceedings Paper

High-power laser diodes with ultra-narrow waveguides for pulse operation
Author(s): Dmitrii Veselov; Yulia Bobretsova; Vyacheslav Golovin; Dmitry Nikolaev; Sergey Slipchenko; Nikita Pikhtin; Peter Kop’ev
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Paper Abstract

The results of designing, manufacturing and investigating characteristics of AlGaAs/InGaAs/GaAs lasers with ultranarrow waveguides are presented. Low threshold current density near 40 A/cm2 has been observed for the lasers with quantum wells. We have demonstrated the possibility of obtaining up to 5 W of output power in continuous mode and up to 40 W in pulsed mode, with a beam convergence (FWHM) of 17.8° It is demonstrated that such lasers can exhibit main characteristics similar to conventional laser heterostructures and allow a potential for further improvement and optimization.

Paper Details

Date Published: 24 February 2020
PDF: 7 pages
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010N (24 February 2020); doi: 10.1117/12.2546278
Show Author Affiliations
Dmitrii Veselov, Ioffe Institute (Russian Federation)
Yulia Bobretsova, Ioffe Institute (Russian Federation)
Vyacheslav Golovin, Ioffe Institute (Russian Federation)
Dmitry Nikolaev, Ioffe Institute (Russian Federation)
Sergey Slipchenko, Ioffe Institute (Russian Federation)
Nikita Pikhtin, Ioffe Institute (Russian Federation)
Peter Kop’ev, Ioffe Institute (Russian Federation)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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