Share Email Print
cover

Proceedings Paper

Impact of EUV multilayer mask defects on imaging performance and its correction methods
Author(s): Yunyun Hao; Lisong Dong; Xi Chen; Rui Chen; Taian Fan; Yayi Wei; Tianchun Ye
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

It is of tremendous impact with multilayer defects, which are caused by particles, substrate pits or scratches, in EUV lithography for the high volume manufacturing. Multilayer defects suppress the productivity and utilization rate of the mask blank. In this paper, we did a thorough investigation by conducting imaging simulations on dense and semi-dense patterns including lines and contact holes. The impact of isolated multilayer defects on the imaging of 22nm half-pitch dense line/contact and 33nm half-pitch semi-dense line has been studied, and the CD errors are calculated. The CD error, caused by the planar defect which is smoothed out during the multilayer deposition process, is found to be within ±10% of target values. This CD error can be compensated by adjusting the exposure dose or local pattern size. In contrast, the non-planar defect, which is not being smoothed in the multilayer surfaces, would lead to severe damages to the lithography performance.

Paper Details

Date Published: 26 September 2019
PDF: 14 pages
Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471B (26 September 2019); doi: 10.1117/12.2536707
Show Author Affiliations
Yunyun Hao, Institute of Microelectronics (China)
Lisong Dong, Institute of Microelectronics (China)
Xi Chen, Beijing Univ. of Posts and Telecommunications (China)
Rui Chen, Institute of Microelectronics (China)
Taian Fan, Institute of Microelectronics (China)
Yayi Wei, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Tianchun Ye, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 11147:
International Conference on Extreme Ultraviolet Lithography 2019
Toshiro Itani; Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray