Share Email Print

Proceedings Paper

A numeric model for the imaging mechanism of metal oxide EUV resists
Author(s): W. D. Hinsberg; S. Meyers
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A numeric model is proposed describing the chemical and physical mechanisms governing image formation in metaloxide (MOx) EUV photoresist systems. Experimental measurements of physical and chemical properties are used to develop a quantitative representation of the chemical and physical state of the MOx resist film at each step in the lithographic process. The role of radiation-induced condensation to drive non-linear changes in development rate is elucidated. Lithographic performance parameters are predicted and compared with experimental results.

Paper Details

Date Published: 27 March 2017
PDF: 11 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014604 (27 March 2017); doi: 10.1117/12.2260265
Show Author Affiliations
W. D. Hinsberg, Columbia Hill Technical Consulting (United States)
S. Meyers, Inpria Corp. (United States)

Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?