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Proceedings Paper

Illumination pupil optimization in 0.33NA EUVL by intensity balancing for semi-iso dark field two-bar M1 building blocks
Author(s): T. Last; L. de Winter; P. van Adrichem; J. Finders
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Paper Abstract

We will shed light on the optimization of lithographic metrics for the semi-isolated dark field two-bar logic building block. Under standard D90Y illumination this building block suffers from large mask 3D induced relative focus dependent CD asymmetries. Such behavior limits its overlapping process window and gives rise to untenable full wafer CDU and intra-field pattern shifts.

We have found that besides a Ta absorber thickness reduction an illumination pupil optimization is necessary to fully remove these CD asymmetries. The pupil optimization is achieved by relating the aerial image decomposition (here: symmetrization and balancing of intensities across the diffracted orders) with lithographic metrics per pupil plane location. The resulting pupil allows us (i) to lift the focus-dependent CD asymmetries and (ii) to co-optimize a number of lithographic metrics such as overlapping process window, contrast, non-telecentricity and pattern shift. The importance of subsidiary conditions (e.g. symmetry of the pupil, required DOF) will be discussed.

Paper Details

Date Published: 20 October 2016
PDF: 7 pages
Proc. SPIE 10032, 32nd European Mask and Lithography Conference, 100320A (20 October 2016); doi: 10.1117/12.2248743
Show Author Affiliations
T. Last, ASML Netherlands B.V. (Netherlands)
L. de Winter, ASML Netherlands B.V. (Netherlands)
P. van Adrichem, ASML Netherlands B.V. (Netherlands)
J. Finders, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 10032:
32nd European Mask and Lithography Conference
Uwe F.W. Behringer; Jo Finders, Editor(s)

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