Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, free-space and underwater telecommunications and the latest quantum technologies such as optical atomic clocks and atom interferometry.

Date Published: 25 October 2016
PDF: 7 pages
Proc. SPIE 9992, Emerging Imaging and Sensing Technologies, 99920C (25 October 2016); doi: 10.1117/12.2240555

Published in SPIE Proceedings Vol. 9992:
Emerging Imaging and Sensing Technologies
Keith L. Lewis; Richard C. Hollins, Editor(s)