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Proceedings Paper

The influence of phenomenological relaxation and finite temperature on the third order nonlinearity of graphene
Author(s): J. L. Cheng; N. Vermeulen; J. E. Sipe
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Paper Abstract

We investigate the effect of phenomenological relaxation parameters on the third order optical nonlinearity of doped graphene by perturbatively solving the semiconductor Bloch equation. We focus on the contributions of optical transitions around the Dirac points, where the widely used linear dispersion relation is a good approximation. An analytic expression for the nonlinear conductivity at zero temperature can be obtained even if relaxation is included. With this analytic formula as a starting point, we construct the conductivity at finite temperature; and we illustrate the dependence of several nonlinear optical effects, such as third harmonic generation, Kerr effects and two photon absorption, and parametric frequency conversion.

Paper Details

Date Published: 27 April 2016
PDF: 9 pages
Proc. SPIE 9894, Nonlinear Optics and its Applications IV, 98941Q (27 April 2016); doi: 10.1117/12.2228300
Show Author Affiliations
J. L. Cheng, Vrije Univ. Brussel (Belgium)
Univ. of Toronto (Canada)
N. Vermeulen, Vrije Univ. Brussel (Belgium)
J. E. Sipe, Univ. of Toronto (Canada)

Published in SPIE Proceedings Vol. 9894:
Nonlinear Optics and its Applications IV
Benjamin J. Eggleton; Neil G. R. Broderick; Alexander L. Gaeta, Editor(s)

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