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Proceedings Paper

Control of CVD precursor purity for integrated circuit manufacture
Author(s): David A. Roberts; Hans J. Graf; Michael J. Halberstadt
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Paper Abstract

Chemical vapor deposition, CVD, has assumed an increasing share of the processes utilized in the manufacture of submicron integrated circuits. In addition to the conventional CVD materials such as silicon oxide, nitride and polysilicon, an array of new materials for both dielectric and conductive material applications are in development. For films like BPSG or tungsten, convenient volatile precursor sources exist, however, in other cases temperature sensitive, lower volatility liquids and solids are utilized. The quality and consistency of these molecular precursors can have a marked impact on the film forming process. The application of SPC methodology to precursor manufacture provides an effective metric for controlling both the quality and the consistency of the precursors.

Paper Details

Date Published: 19 September 1995
PDF: 12 pages
Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); doi: 10.1117/12.221307
Show Author Affiliations
David A. Roberts, Schumacher (United States)
Hans J. Graf, Schumacher (United States)
Michael J. Halberstadt, Schumacher (United States)

Published in SPIE Proceedings Vol. 2637:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing
Anant G. Sabnis; Ivo J. Raaijmakers, Editor(s)

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