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Proceedings Paper

High-frequency resonant tunnelling diode oscillator with high-output power
Author(s): Jue Wang; Khalid Alharbi; Afesomeh Ofiare; Ata Khalid; David Cumming; Edward Wasige
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Paper Abstract

In this paper, a prototype G-band (140 GHz-220 GHz) monolithic microwave integrated circuit (MMIC) resonant tunneling diode (RTD) oscillator is reported. The oscillator employs two In0.53Ga0.47As/AlAs RTD devices in the circuit to increase the output power. The measured output power was about 0.34 mW (-4.7 dBm) at 165.7 GHz, which is the highest power reported for RTD oscillator in G-band frequency range. This result demonstrates the validity of the high frequency/high power RTD oscillator design. It indicates that RTD devices, as one of the terahertz (THz) source candidates, have promising future for room-temperature THz applications in such as imaging, wireless communication and spectroscopy analysis, etc. By optimizing RTD oscillator design, it is expected that considerably higher power (>1 mW) at THz frequencies (>300 GHz) will be obtained.

Paper Details

Date Published: 21 October 2015
PDF: 6 pages
Proc. SPIE 9651, Millimetre Wave and Terahertz Sensors and Technology VIII, 96510E (21 October 2015); doi: 10.1117/12.2198003
Show Author Affiliations
Jue Wang, Univ. of Glasgow (United Kingdom)
Khalid Alharbi, Univ. of Glasgow (United Kingdom)
Afesomeh Ofiare, Univ. of Glasgow (United Kingdom)
Ata Khalid, Univ. of Glasgow (United Kingdom)
David Cumming, Univ. of Glasgow (United Kingdom)
Edward Wasige, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 9651:
Millimetre Wave and Terahertz Sensors and Technology VIII
Neil A. Salmon; Eddie L. Jacobs, Editor(s)

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