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Proceedings Paper

Charge transfer efficiency modeling/measurements as function of CCD pixel rate
Author(s): George J. Yates; Robert A. Gallegos; Claudine R. Pena; Paul A. Zagarino
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Paper Abstract

We have developed a charge transport model for predicting the effects on Charge Transfer Efficiency (CTE) of Charge Coupled Devices (CCDs) as functions of number of transfers, pixel charge flow rate, and magnitude in the CCD's vertical and horizontal charge transport mediums. The model uses carrier lifetime and mobility criteria to establish pixel speed arguments and limitations for various CCD architectures. The model is compared with experimental measurements obtained using strobed single pixel illumination and a variant of the deferred charge tail technique while independently varying the CCD pixel rates for both the vertical and horizontal readout phases. The generic model is discussed and applied to specific real CCDs. Agreement between predicted performance and actual measured performance is presented.

Paper Details

Date Published: 1 September 1995
PDF: 16 pages
Proc. SPIE 2549, Ultrahigh- and High-Speed Photography, Videography, and Photonics '95, (1 September 1995); doi: 10.1117/12.218304
Show Author Affiliations
George J. Yates, Los Alamos National Lab. (United States)
Robert A. Gallegos, Los Alamos National Lab. (United States)
Claudine R. Pena, Los Alamos National Lab. (United States)
Paul A. Zagarino, Sharpenit (United States)

Published in SPIE Proceedings Vol. 2549:
Ultrahigh- and High-Speed Photography, Videography, and Photonics '95
George A. Kyrala; Donald R. Snyder, Editor(s)

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