We realise growth of both GaAsP and GaAs core nanowires (NWs), as well as GaAsP core-shell NWs grown on (111) Si substrates using solid source molecular beam epitaxy (MBE). By modifying the growth conditions it is possible to change the dimensions of the GaAsP NWs and optimisation of these conditions yields high crystal quality structures. Scanning electron microscopy (SEM) as well as temperature, power and time resolved photoluminescence (PL) are used to study the optical and structural properties of the NWs. The incorporation of P into the NWs is used to shift the PL emission for ~ 810 nm to ~ 730 nm at 77 K, and also results in enhanced PL and an improved carrier lifetime. The addition of a p-doped GaAsP shell to a GaAsP core NW reduces the nonradiative recombination at surface states, as evidenced by x14 reduction of PL quenching with temperature, enhanced carrier lifetime, as well as a x3.5 increase in 77 K integrated PL intensity.

Date Published: 27 February 2015
PDF: 7 pages
Proc. SPIE 9373, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII, 937308 (27 February 2015); doi: 10.1117/12.2079263

Published in SPIE Proceedings Vol. 9373:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII
Diana L. Huffaker; Holger Eisele, Editor(s)