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Proceedings Paper

Towards high power flip-chip long-wavelength semiconductor disk lasers
Author(s): A. Rantamaki; E. Saarinen; J. Lyytikäinen; J. Kontio; J. Heikkinen; Kimmo Lahtonen; M. Valden; O. Okhotnikov
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Paper Abstract

Optically pumped semiconductor disk lasers (SDLs) are presented with emphasis on wafer bonding InP-based active regions with GaAs-based distributed Bragg reflectors (DBRs) and reducing the number of required layer pairs in the DBR. The wafer bonding is performed at a relatively low temperature of 200 °C utilizing transparent intermediate bonding layers. The reflectivity of the semiconductor DBR section is enhanced by finishing the DBR with a thin low refractive index layer and a highly reflecting metal layer. Such a design enables considerably thinner mirror structures than the conventional design, where the semiconductor DBR is finished with mere metal layers. In addition, a 90 nm thick Al2O3 layer is shown to produce negligible increase in the thermal resistance of the SDL. Furthermore, a flip-chip SDL with a GaAs/AlAs-Al2O3-Al mirror is demonstrated with watt-level output power at the wavelength of 1.32 μm. The properties and future improvement issues for flip-chip SDLs emitting at 1.3–1.6 μm are also discussed.

Paper Details

Date Published: 4 March 2015
PDF: 13 pages
Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 934908 (4 March 2015); doi: 10.1117/12.2076795
Show Author Affiliations
A. Rantamaki, Tampere Univ. of Technology (Finland)
E. Saarinen, Tampere Univ. of Technology (Finland)
J. Lyytikäinen, Tampere Univ. of Technology (Finland)
J. Kontio, Tampere Univ. of Technology (Finland)
J. Heikkinen, Tampere Univ. of Technology (Finland)
Kimmo Lahtonen, Tampere Univ. of Technology (Finland)
M. Valden, Tampere Univ. of Technology (Finland)
O. Okhotnikov, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 9349:
Vertical External Cavity Surface Emitting Lasers (VECSELs) V
Mircea Guina, Editor(s)

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