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Proceedings Paper

Relaxation mechanisms of electronic excitation in nanostructures of porous silicon
Author(s): Pavel K. Kashkarov; Elizaveta A. Konstantinova; Viktor Yu. Timoshenko
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Paper Abstract

Results of experimental investigation of photostimulated effects in porous silicon are presented. Some conclusions about the dissipation of a nonequilibrium charge carrier energy in this material are made.

Paper Details

Date Published: 2 May 1994
PDF: 6 pages
Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); doi: 10.1117/12.174977
Show Author Affiliations
Pavel K. Kashkarov, Moscow State Univ. (Russia)
Elizaveta A. Konstantinova, Moscow State Univ. (Russia)
Viktor Yu. Timoshenko, Moscow State Univ. (Russia)

Published in SPIE Proceedings Vol. 2150:
Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits
Mario Nicola Armenise, Editor(s)

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