Resonant tunneling diodes (RTDs) have been extensively studied due to their potential applications in very high speed electronics, optical communications, and terahertz generation. In this work, we report the latest results on the characterization of the resonant tunneling diode photo-detectors (RTD-PDs), incorporating InGaAlAs light sensitive layers for sensing at the telecommunication wavelength of λ = 1310 nm. We have measured responsivities up to 28.8 A/W and light induced voltage shift of 204.8 V/W for light injection powers around 0.25 mW.

Date Published: 22 August 2017
PDF: 7 pages
Proc. SPIE 10453, Third International Conference on Applications of Optics and Photonics, 1045307 (22 August 2017); doi: 10.1117/12.2271317

Published in SPIE Proceedings Vol. 10453:
Third International Conference on Applications of Optics and Photonics
Manuel Filipe P. C. M. Martins Costa, Editor(s)