Novel technology of III-V die-bonded SOI photonic integrated circuits
In person: 30 September 2021 • 2:55 PM - 3:15 PM BST | Boisdale 1
In the frame of the H2020 PICTURE project, we designed and developed densely integrated photonic devices and transceiver (TRx) circuits for high bit-rate telecom and datacom applications. We implemented a process with four different InP-based dies bonded on SOI wafers. With one sole back-end processing run, we achieved the fabrication of multiple components of the complex TRx circuits, and many building block devices, such as III-V/Si SOAs & Fabry-Perot lasers, photodiodes or fast tunable capacitive DFB lasers. First testing of these devices shows promising results. 13dBm-saturation power SOAs and less than 2ns-tuning time capacitive DFB lasers were fabricated and demonstrated.
III-V Lab. (France)
Delphine Néel graduated from the Ecole Centrale de Lyon in 2003. She obtained her PhD degree from the INSA de Lyon in 2006 where she studied photonic crystal waveguides on SOI by near-field optics. Then, she spent two years of post-doctoral studies at the CEA-LETI where she worked on the optical trapping of nano-particules and nano-wires. In 2009, she joined the Centre de Nanosciences et de Nanotechnologies at the University Paris-Saclay as a research engineer where she was working on process developments in the clean room facility, principally in photonics. She joined the III-V lab in 2017 and works on the fabrication of hybrid III-V components on SOI.