Gas cluster ion bombardment of GaAs: XPS depth profiles and molecular dynamics modelling
In person: 28 September 2021 • 3:10 PM - 3:30 PM BST | Carron 1
The benefits of using GCIBs for depth profiling of inorganic materials is less clear, due to issues of preferential sputtering still remaining and artefacts being introduced. XPS depth profiles have been recorded for GaAs (100) wafers using GCIBs of varying beam energies and cluster sizes to investigate the effects of different GCIB conditions on the preferential sputtering of As and ion beam induced microtopography. GCIB bombardment of GaAs has also been modelled using the molecular dynamics (MD) code to provide an insight into the effects of using different GCIB conditions for XPS depth profiling of compound semiconductors, such as GaAs
Univ. of Surrey (United Kingdom), Thermo Fisher Scientific (United Kingdom)
Helen Oppong-Mensah is an EngD student working on her research project jointly sponsored by Thermo Scientific and the Surrey Ion Beam Centre. Helen Oppong-Mensah's research interest focuses on the use of argon cluster ion sputtering to determine the chemical composition of semiconductor compound wafers using the surface chemical analysis technique, X-ray photoelectron spectroscopy (XPS) depth profiling.