Dr. Shanmugam Aravazhi

Senior Semiconductor Research Professional
Aravazhi, Shanmugam
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Area of Expertise: crystal growth and characterisation (bulk & thin film), semiconductor, compound semiconductor (Ge, GaSb, InAs, InSb, InP, GaAs), characterisation techniques (XRD, SEM, FTIR, AFM, EDX, GDMS, ICP), leadership, senior management, research and development, innovation, program & project management
ORCID iD: https://orcid.org/0000-0002-3123-3021
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Profile Summary

Dr. Shanmugam Aravazhi, Ph.D, is a passionate & seasoned Materials Research professional with over 25 years of focussed R&D experience working at world best Universities & top multinational Semiconductor Industries worldwide

He has exceptional talents in Semiconductors, Photonics, Innovation, Research & Development Leadership & Management of New Materials Technology

Proven track record in Innovation, "Out of Box" thinker, Creativity and Applying Novel Ideas successfully in real world industrial Process & Production

Hands on experience in Crystal Growth & characterization (Epi & Bulk) including Semiconductors / Compound Semiconductors : Ge, HPGe, GaAs, InSb, GaSb, InAs, InP. Matured experience in developing practical technology for defect free high quality materials process & production (thin films, Epitaxy, bulk crystals)

He has worked at premier research institutes & multi-national companies (ETH Swiss Federal Institute of Technology- Zurich, Hebrew Univ of Jerusalem – Israel, MESA+ Institute for Nanotechnology Univ of Twente & Tech Univ Eindhoven Netherlands Umicore Electro-Optic Materials Belgium & IQE - Wafer Technology UK) in a wide range of materials: semiconductors, photonics, lasers, oxides, non-linear optics & ferroelectrics (crystals & thin film)

He has a wide network of professionals in R&D, management & Industry worldwide. He has published more than 115 research papers in international journals & conferences (RG Score: 29.11, H-index: 20 ) NL publications: http://www.narcis.nl/personpub/RecordID/PRS1323739

He has successfully managed Innovative R&D projects with cutting edge ideas across the entire value chain for high quality, high purity & wide diameter (up to 6”) Germanium (Ge, HPGe) crystal growth (Cz- Czochralski technique) - controlling dislocations (EPD) & point defects (PITS) for Solar Cells, LEDs, Gamma-Ray, Dark Matter & Infra-Red detector applications. Has successfully increased the yield of GaSb & InSb compound semiconductor crystals

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