Dr. James W. Thackeray

Dr Thackeray was honored in 2017 to become Fellow member of SPIE for his significant service to SPIE and the greater science community, as well as his noteworthy technical achievements in photoresist materials for semiconductor lithography. He has been instrumental in the development of numerous photoresist and antireflective coating materials for ultraviolet (UV), deep-UV, and extreme UV (EUV) lithography. His work developing chemically amplified photoresists and his invention of a KrF-wavelength antireflection coating for lithography were extremely important both commercially and scientifically for the semiconductor industry. Currently, he leads development on the next generation of resist materials for sub-20-nm semiconductor devices that feature low line-edge roughness.

Thackeray has been granted 86 U.S. patents and twice won the Otto Haas Award, the highest award for scientific achievement at Rohm and Haas (now Dow Electronic Materials). Dr Thackeray has a Ph. D in Chemistry from the Massachusetts Institute of Technology. . He is a member of the American Chemical Society (ACS), the Polymeric Materials Science Engineering Division of ACS, and has been member of SPIE for more than 20 years.