The improvement of crystal orientation in AlN with controlled inversion domain
We grew the AlN on c-plane sapphire substrate to investigate of effect in inversion domain formation by the temperature of buffer layer. As a result, the values of Full width at half maximum (FWHM) by X-ray rocking curve were decreasing with the difference temperature on the center of 800℃. Next, we grew the AlN several growth rates using 300℃ buffer layers to investigate thermal diffusion of oxygen from sapphire to AlN. The -c polarity AlN were grown in case of the low growth rate. As a result, FWHM obtained at tilt and twist diffractions were 210 and 350 arcsecond, respectively.
Tokushima Univ. (Japan)
Shota Tsuda received the B.S. degrees in semiconductor engineering from Tokushima University, Tokushima, Japan, in 2020. And he will be graduate M.S. next spring. Mr. Tsuda’s technology expertise includes epitaxial growth in high temperature MOVPE for deep ultra violet LED. He is currently with the development of AlN for light-emitting diodes in UV region.