Paper 13371-30
Paper 13371-30
Slow-light lasing in 1D photonic crystal InGaAs/GaAs nano-ridges epitaxially grown on a Si wafer
29 January 2025 • 5:30 PM - 5:50 PM PST | Moscone Center, Room 306 (Level 3 South)
Abstract
The integration of lasers on silicon photonics is often considered the "holy grail" of photonics, due to its potential to revolutionize various applications, including sensing, high-speed communication and computing. Here, we demonstrate a novel, optically pumped, vertically emitting laser, leveraging the slow-light mode arising from the coupling of multiple InGaAs/GaAs nano-ridges on silicon. We experimentally show low-threshold lasing (≤6 kW/Cm^2) for a 20 times shorter cavity (~15 µm) than previously demonstrated DFB lasers. Also, we studied the beam profile in depth, showing highly directional emission.
Presenter
Eslam Mostafa Bakry Fahmy
imec, Univ. Gent (Belgium)
Eslam is a doctoral researcher at the Photonics Research Group, Ghent University. His research focuses on III-V micro-lasers epitaxially grown on silicon. The integration of lasers on silicon is highly sought after due to its transformative potential in various applications, including sensing, communication, and computing. Eslam's work contributes to advancing this pivotal area of photonics, aiming to develop more efficient and cost-effective photonic integrated circuits (PICs).