Resonant Raman cooling and radiation-balanced lasing: feasibility study
The idea of Raman cooling of semiconductors has been around for quite some time, but no detailed analysis of what are the attainable cooling rates and temperature has been given. We provide such an analysis for the cases resonant Raman scattering with and without exciton effects and show that one cannot bring down the temperature to less than 250K under even the best conceivable conditions. At the same time, Raman it may be possible to operate a (Stokes) Raman laser that is cooled by Anti-Stokes scattering at around 300K
Johns Hopkins Univ. (United States)
Jacob B Khurgin has received PhD from Polytechnic Institute of New York University in 1987. Prior to that he worked at Philips NV Laboratories in Briarcliff Manor, NY where his interest included solid state lasers, semiconductor lasers, nonlinear optics, displays, and lighting. Since 1988 he has been a Professor of Electrical and Computer Engineering at Johns Hopkins University in Baltimore MD where he worked on way too many topics to count, mostly in opto-electronics, condensed matter physics, optical communications, microwave photonics, nonlinear optics, slow light, plasmonics, and what not. He as an author of about 340 refereed papers, 7 books chapters, and 45 US patents.