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Conference 12022 > Paper 12022-59
Paper 12022-59

Red In0.51Ga0.49P/Al0.25Ga0.25In0.5P RC LED directly grown on silicon 300 mm

On demand | Presenting live 26 January 2022

Abstract

With the constant development of optical devices in communication and display applications, producing Light-Emitting Devices (LEDs) on large scale wafers with silicon circuit functions is a main challenge nowadays. State of the art red LEDs are grown on GaAs substrate, which lead to a high cost and low scalability due the III-V substrate. However, the direct epitaxy of III-V materials on silicon could allow to develop devices at a low-cost solution at high scalability. The feasibility of direct growth approach is approved by developing red LEDs on 300 mm silicon wafers.

Presenter

CEA-LETI (France)
Engineer (thin film materials) and PhD student working at CEA-LETI on red inorganic (III-V materials) LEDs directly grown on silicon 300 mm by MOCVD
Presenter/Author
CEA-LETI (France)
Author
CEA-LETI (France)
Author
Patrick Le Maître
CEA-LETI (France)
Author
Badhise Ben Bakir
CEA-LETI (France)
Author
CEA-LETI (France)
Author
Mickael Martin
Lab. des Technologies de La Microélectronique, CNRS (France)
Author
Jean-Michel Hartmann
CEA-LETI (France)
Author
Lab. des Technologies de La Microélectronique, CNRS (France)
Author
Lab. des Technologies de La Microélectronique, CNRS (France)
Author
Thierry Baron
Lab. des Technologies de La Microélectronique, CNRS (France)
Author
Christophe Jany
CEA-LETI (France)