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25 - 30 January 2025
San Francisco, California, US
Conference 13382 > Paper 13382-10
Paper 13382-10

Quasi-static MEMS scanners for an integrated cavity in a trapped ion quantum computer

27 January 2025 • 3:35 PM - 3:50 PM PST | Moscone West, Room 2022 (Level 2)

Abstract

This work presents AlScN driven quasi-static MEMS scanners for the stabilization of a laser mode inside of an ion trap cavity. Quasi-statically, the MEMS scanners FoV surpasses 20° TOSA at ±105 V in x- and y-direction and 16° TOSA during spiral scanning. Driven in resonance, a scan angle of 100° TOSA at 550 Hz in a single axis and 50° in spiral scanning are measured. Additionally, the reflecting plane moves by more than 100 μm at ±5 V in z-direction in the resonant piston mode. This 3D movement can stabilize an optical resonator in an ion trap to promote the Purcell effect which drastically increases the read-out efficiency of the trapped ions quantum state. This addresses a significant scalability challenge in trapped ion quantum computing for systems exceeding 100 Qubits. Therefore, miniaturization and customization of the MEMS-scanners for further integration into the ion trap cavity are ongoing.

Presenter

Paul Raschdorf
Fraunhofer-Institut für Siliziumtechnologie ISIT (Germany)
Paul Raschdorf is currently employed at the Fraunhofer Institute for Silicon Technology, specializing in optical MEMS. He is pursuing a PhD focusing on quasi-static MEMS mirrors and MEMS stages. Paul holds a master’s degree in materials science and engineering from Kiel University in northern Germany, where he specialized in semiconductor technology and magneto-optical analysis during his Bachelor's and Master's studies.
Application tracks: Photonic Chips
Presenter/Author
Paul Raschdorf
Fraunhofer-Institut für Siliziumtechnologie ISIT (Germany)
Author
Fraunhofer-Institut für Siliziumtechnologie ISIT (Germany)
Author
Fraunhofer-Institut für Siliziumtechnologie ISIT (Germany)
Author
Fraunhofer-Institut für Siliziumtechnologie ISIT (Germany)
Author
Fraunhofer-Institut für Siliziumtechnologie ISIT (Germany)
Author
Jeong-Yeon Hwang
Fraunhofer-Institut für Siliziumtechnologie ISIT (Germany)
Author
Johannes Gutenberg Univ. Mainz (Germany)
Author
Johannes Gutenberg Univ. Mainz (Germany)
Author
Johannes Gutenberg Univ. Mainz (Germany)
Author
Johannes Gutenberg Univ. Mainz (Germany)
Author
Johannes Gutenberg Univ. Mainz (Germany)
Author
Shanshan Gu-Stoppel
Fraunhofer-Institut für Siliziumtechnologie ISIT (Germany)