Paper 13360-1
Optically active InGaAs axial nanowire heterostructures for quantum integrated photonic circuits
28 January 2025 • 8:20 AM - 8:40 AM PST | Moscone West, Room 2008 (Level 2)
Abstract
We propose a monolithically integrated, vertical-cavity nanowire (NW) quantum light source coupled to a silicon (Si) quantum photonic integrated circuit (QPIC). Starting from modelling of the coupling efficiencies of an embedded quantum emitter and its dependencies on key geometrical parameters of NW/Si-waveguide dimensions, we further show experimental progress towards such a deterministic quantum light source using InGaAs emitters in a GaAs(Sb) NW cavity. Key understanding of the growth and optical properties of the InGaAs emitter is provided from systematic structure-property relationship studies.
Presenter
Walter Schottky Institut (Germany)
Gregor Koblmüller is a faculty member at the Walter Schottky Institute (WSI) and Physics Department at the Technical University of Munich (TUM). He received his PhD (2005) in Applied Physics from the Vienna University of Technology. From 2005-2008 he joined the Materials Department at UC Santa Barbara as a postdoctoral fellow and project scientist, working extensively on group-III nitrides. In 2009 he joined the WSI-TUM where he is heading the “Semiconductor Quantum Nanomaterials” Group with extensive activities in the development of monolithically integrated nanophotonic devices. He completed his habilitation in Experimental Physics at TUM in 2017. He is the recipient of numerous awards, including the ERC Consolidator Grant Award, the Arnold Sommerfeld Prize, the Intl’ Young Investigator MBE Award, and the Marie Curie Grant Award. He is also principal investigator within two Clusters of Excellence (MCQST and e-conversion) funded by the German Exellence Initiative.