On the yield assessment and improvement of III-V on silicon lasers
26 January 2022 • 11:10 AM - 11:40 AM PST | Room 303 (Level 3 South)
Heterogeneous integration of III-V on silicon lasers eliminates some constraints of chip-to-chip alignment, but the optical coupling between the two media remains of importance for repeatable performances. First, we present a processing enhancement of the bonding oxide thickness uniformity across the wafer, improving the cross-section reproducibility. Next optimized tapering of the III-V/Si waveguides, offering a design agnostic to the number of quantum wells, will be shown. Finally, the yield of III-V on Silicon tunable lasers was evaluated by mean of wafer level measurements, using a yield oriented tuning of each cavity, so that lasers characteristics can be fairly compared.
Karim Hassan received the Ph.D. degree in physics from the University of Burgundy, Dijon, France, in 2013 on the development of thermo-optical plasmonic routers for telecom applications. Since 2014, he has been with the CEA-Leti (France) as a Research Fellow, and currently leading the Photonic Interconnects activities. His research interests include the design, fabrication, and characterization of photonics integrated circuits, hybrid III-V on silicon laser sources, and topological optimization for nanophotonics. He has authored or co-authored more than 100 journal publications, conference papers, and patents.