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Conference 12007 > Paper 12007-21
Paper 12007-21

On the yield assessment and improvement of III-V on silicon lasers

26 January 2022 • 11:10 AM - 11:40 AM PST | Room 303 (Level 3 South)

Abstract

Heterogeneous integration of III-V on silicon lasers eliminates some constraints of chip-to-chip alignment, but the optical coupling between the two media remains of importance for repeatable performances. First, we present a processing enhancement of the bonding oxide thickness uniformity across the wafer, improving the cross-section reproducibility. Next optimized tapering of the III-V/Si waveguides, offering a design agnostic to the number of quantum wells, will be shown. Finally, the yield of III-V on Silicon tunable lasers was evaluated by mean of wafer level measurements, using a yield oriented tuning of each cavity, so that lasers characteristics can be fairly compared.

Presenter

CEA-LETI (France)
Karim Hassan received the Ph.D. degree in physics from the University of Burgundy, Dijon, France, in 2013 on the development of thermo-optical plasmonic routers for telecom applications. Since 2014, he has been with the CEA-Leti (France) as a Research Fellow, and currently leading the Photonic Interconnects activities. His research interests include the design, fabrication, and characterization of photonics integrated circuits, hybrid III-V on silicon laser sources, and topological optimization for nanophotonics. He has authored or co-authored more than 100 journal publications, conference papers, and patents.
Presenter/Author
CEA-LETI (France)
Author
III-V Lab. (France)
Author
CEA-LETI (France)
Author
Stéphane Malhouitre
CEA-LETI (France)
Author
Christophe Jany
CEA-LETI (France)
Author
Sylvain Guerber
CEA-LETI (France)
Author
Delphine Néel
III-V Lab. (France)
Author
Jean Decobert
III-V Lab. (France)
Author
David Bitauld
III-V Lab. (France)