Nanoscale dopant profiling in InGaN/GaN core-shell wires by capacitance voltage measurement

Timothée Lassiaz; Pierre Tchoulfian; Fabrice Donatini; Julien Brochet; Romain Parize; Gwénolé Jacopin; Julien Pernot

doi:10.1117/12.2576604

5 March 2021 Nanoscale dopant profiling in InGaN/GaN core-shell wires by capacitance voltage measurement

Timothée Lassiaz, Pierre Tchoulfian, Fabrice Donatini, Julien Brochet, Romain Parize, Gwénolé Jacopin, Julien Pernot

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861T (2021) https://doi.org/10.1117/12.2576604
Event: SPIE OPTO, 2021, Online Only

Abstract

InGaN/GaN core-shell wire-based LEDs are a promising alternative to the c-plane two-dimensional LEDs for µLED display technologies. Developing correlative doping characterization techniques adapted to wires is essential to optimize the epitaxial structure. The impact of different LED growth conditions was investigated through current-voltage (I-V) and capacitance–voltage (C–V) characteristics on both single wire and assembly of wires. A statistical C-V study was carried out on ~70 single wires to evaluate the agreement in depletion width and effective doping level Neff values between single and assembly of connected wires. To corroborate the results, EBIC measurement were also performed to determine the position of the p-n junction and depletion region width.

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Timothée Lassiaz, Pierre Tchoulfian, Fabrice Donatini, Julien Brochet, Romain Parize, Gwénolé Jacopin, and Julien Pernot "Nanoscale dopant profiling in InGaN/GaN core-shell wires by capacitance voltage measurement", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861T (5 March 2021); https://doi.org/10.1117/12.2576604

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